TY - JOUR
T1 - Performance of a low noise front-end ASIC for Si/CdTe detectors in compton gamma-ray telescope
AU - Tajima, Hiroyasu
AU - Nakamoto, Tatsuya
AU - Tanaka, Takaaki
AU - Uno, Shingo
AU - Mitani, Takefumi
AU - Do Couto e Silva, Eduardo
AU - Fukazawa, Yasushi
AU - Kamae, Tuneyoshi
AU - Madejski, Grzegorz
AU - Marlow, Daniel
AU - Nakazawa, Kazuhiro
AU - Nomachi, Masaharu
AU - Okada, Yu
AU - Takahashi, Tadayuki
N1 - Funding Information:
Manuscript received November 15, 2003; revised February 6, 2004. This work was supported by the U.S. Department of Energy under Contract DE-AC03-76SF00515, by the Ministry of Education, Culture, Sports, Science and Technology of Japan under Grants-in-Aid 12554006, 13304014, and by “Ground-based Research Announcement for Space Utilization” promoted by Japan Space Forum. H. Tajima, T. Kamae, G. Madejski, and E. do Couto e Silva are with Stanford Linear Accelerator Center, Menlo Park, CA 94095 USA (e-mail: [email protected]). T. Nakamoto, S. Uno, and Y. Fukazawa are with Hiroshima University, Hi-gashi-Hiroshima, Hiroshima 739–8256, Japan. T. Tanaka, T. Mitani, T. Takahashi, and K. Nakazawa are with the Institute of Space and Astronautical Science, Sagamihara, Kanagawa 229–8510, Japan. D. Marlow is with Princeton University, Princeton, NJ 085444 USA. M. Nomachi is with Osaka University, Toyonaka, Osaka 560–0043, Japan. Y. Okada is with University of Tokyo, Bunkyo-ku, Tokyo 113–0033, Japan. Digital Object Identifier 10.1109/TNS.2004.829394
PY - 2004/6
Y1 - 2004/6
N2 - Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC (application-specific integrated circuit), VA32TA, to realize this goal for the readout of double-sided silicon strip detector (DSSD) and cadmium telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV [full-width at half-maximum (FWHM)] for 60 and 122 keV at 0°C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.
AB - Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC (application-specific integrated circuit), VA32TA, to realize this goal for the readout of double-sided silicon strip detector (DSSD) and cadmium telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV [full-width at half-maximum (FWHM)] for 60 and 122 keV at 0°C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.
KW - Analog integrated circuits
KW - Cadmium telluride
KW - Compton camera
KW - Gamma-ray detectors
KW - Silicon radiation detectors
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U2 - 10.1109/TNS.2004.829394
DO - 10.1109/TNS.2004.829394
M3 - Article
AN - SCOPUS:3342890652
SN - 0018-9499
VL - 51
SP - 842
EP - 847
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 3 III
ER -