Abstract
Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC, VA32TA, to realize this goal for the readout of Double-sided Silicon Strip Detector (DSSD) and Cadmium Telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0̊ Cwith a DSSD and 1.7 keV (FWHM) with a CdTe detector.
Original language | English (US) |
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Article number | N18-5 |
Pages (from-to) | 396-401 |
Number of pages | 6 |
Journal | IEEE Nuclear Science Symposium Conference Record |
Volume | 1 |
DOIs | |
State | Published - 2003 |
Event | 2003 IEEE Nuclear Science Symposium Conference Record - Nuclear Science Symposium, Medical Imaging Conference - Portland, OR, United States Duration: Oct 19 2003 → Oct 25 2003 |
All Science Journal Classification (ASJC) codes
- Radiation
- Nuclear and High Energy Physics
- Radiology Nuclear Medicine and imaging
Keywords
- Cadmium Telluride
- CdTe
- Compton telescope
- Gamma-ray
- SSD
- Semiconductor detector
- Silicon Strip Detector