Pattern formation resulting from faceted growth in zone-melted thin films

Loren Pfeiffer; Scott Paine; G. H. Gilmer; Wim Van Saarloos; K. W. West

doi:10.1103/PhysRevLett.54.1944

Pattern formation resulting from faceted growth in zone-melted thin films

Loren Pfeiffer, Scott Paine, G. H. Gilmer, Wim Van Saarloos, K. W. West

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.

Original language	English (US)
Pages (from-to)	1944-1947
Number of pages	4
Journal	Physical review letters
Volume	54
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.54.1944
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.54.1944

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title = "Pattern formation resulting from faceted growth in zone-melted thin films",

abstract = "We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.",

author = "Loren Pfeiffer and Scott Paine and Gilmer, \{G. H.\} and Saarloos, \{Wim Van\} and West, \{K. W.\}",

year = "1985",

doi = "10.1103/PhysRevLett.54.1944",

language = "English (US)",

volume = "54",

pages = "1944--1947",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "17",

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T1 - Pattern formation resulting from faceted growth in zone-melted thin films

AU - Pfeiffer, Loren

AU - Paine, Scott

AU - Gilmer, G. H.

AU - Saarloos, Wim Van

AU - West, K. W.

PY - 1985

Y1 - 1985

N2 - We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.

AB - We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.

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U2 - 10.1103/PhysRevLett.54.1944

DO - 10.1103/PhysRevLett.54.1944

M3 - Article

C2 - 10031182

AN - SCOPUS:5244370554

SN - 0031-9007

VL - 54

SP - 1944

EP - 1947

JO - Physical review letters

JF - Physical review letters

IS - 17

ER -

Pattern formation resulting from faceted growth in zone-melted thin films

Abstract

All Science Journal Classification (ASJC) codes

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