Abstract
We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.
Original language | English (US) |
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Pages (from-to) | 1944-1947 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 54 |
Issue number | 17 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy