Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance

Selina Olthof; Sanjeev Singh; Swagat K. Mohapatra; Stephen Barlow; Seth R. Marder; Bernard Kippelen; Antoine Kahn

doi:10.1063/1.4772551

Passivation of trap states in unpurified and purified C₆₀ and the influence on organic field-effect transistor performance

Selina Olthof
, Sanjeev Singh
, Swagat K. Mohapatra
, Stephen Barlow
, Seth R. Marder
, Bernard Kippelen
, Antoine Kahn

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

We investigate trap-state passivation by addition of ultra-low amounts of n-dopants in organic field-effect transistors (OFET) made of as-received and purified fullerene C₆₀. We find a strong dependence of the OFET threshold voltage (V_T) on the density of traps present in the layer. In the case of the unpurified material, V_T is reduced from 17.9 V to 4.7 V upon trap passivation by a dopant:C₆₀ ratio of ∼10 ^-3, while the I_on/off current ratio remains high. This suggests that ultra-low doping can be used to effectively compensate impurity and defect-related traps.

Original language	English (US)
Article number	253303
Journal	Applied Physics Letters
Volume	101
Issue number	25
DOIs	https://doi.org/10.1063/1.4772551
State	Published - Dec 17 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4772551

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@article{21a1ccf819154486b1750db9240a4be5,

title = "Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance",

abstract = "We investigate trap-state passivation by addition of ultra-low amounts of n-dopants in organic field-effect transistors (OFET) made of as-received and purified fullerene C60. We find a strong dependence of the OFET threshold voltage (VT) on the density of traps present in the layer. In the case of the unpurified material, VT is reduced from 17.9 V to 4.7 V upon trap passivation by a dopant:C60 ratio of ∼10 -3, while the Ion/off current ratio remains high. This suggests that ultra-low doping can be used to effectively compensate impurity and defect-related traps.",

author = "Selina Olthof and Sanjeev Singh and Mohapatra, \{Swagat K.\} and Stephen Barlow and Marder, \{Seth R.\} and Bernard Kippelen and Antoine Kahn",

note = "Funding Information: This work was supported by Solvay S.A., the Office of Naval Research (N00014-11-1-0313), and the National Science Foundation (DMR-1005892). S.O. acknowledges support from the German Academic Exchange Service (DAAD). S.R.M. and B.K. serve as consultants to Solvay and receive compensation for these services. This study could affect their personal financial status. The terms of this arrangement have been reviewed and approved by Georgia Tech in accordance with its conflict of interest policies.",

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doi = "10.1063/1.4772551",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

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T1 - Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance

AU - Olthof, Selina

AU - Singh, Sanjeev

AU - Mohapatra, Swagat K.

AU - Barlow, Stephen

AU - Marder, Seth R.

AU - Kippelen, Bernard

AU - Kahn, Antoine

N1 - Funding Information: This work was supported by Solvay S.A., the Office of Naval Research (N00014-11-1-0313), and the National Science Foundation (DMR-1005892). S.O. acknowledges support from the German Academic Exchange Service (DAAD). S.R.M. and B.K. serve as consultants to Solvay and receive compensation for these services. This study could affect their personal financial status. The terms of this arrangement have been reviewed and approved by Georgia Tech in accordance with its conflict of interest policies.

PY - 2012/12/17

Y1 - 2012/12/17

N2 - We investigate trap-state passivation by addition of ultra-low amounts of n-dopants in organic field-effect transistors (OFET) made of as-received and purified fullerene C60. We find a strong dependence of the OFET threshold voltage (VT) on the density of traps present in the layer. In the case of the unpurified material, VT is reduced from 17.9 V to 4.7 V upon trap passivation by a dopant:C60 ratio of ∼10 -3, while the Ion/off current ratio remains high. This suggests that ultra-low doping can be used to effectively compensate impurity and defect-related traps.

AB - We investigate trap-state passivation by addition of ultra-low amounts of n-dopants in organic field-effect transistors (OFET) made of as-received and purified fullerene C60. We find a strong dependence of the OFET threshold voltage (VT) on the density of traps present in the layer. In the case of the unpurified material, VT is reduced from 17.9 V to 4.7 V upon trap passivation by a dopant:C60 ratio of ∼10 -3, while the Ion/off current ratio remains high. This suggests that ultra-low doping can be used to effectively compensate impurity and defect-related traps.

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DO - 10.1063/1.4772551

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IS - 25

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ER -

Passivation of trap states in unpurified and purified C₆₀ and the influence on organic field-effect transistor performance

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