Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance

Selina Olthof, Sanjeev Singh, Swagat K. Mohapatra, Stephen Barlow, Seth R. Marder, Bernard Kippelen, Antoine Kahn

Research output: Contribution to journalArticle

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Abstract

We investigate trap-state passivation by addition of ultra-low amounts of n-dopants in organic field-effect transistors (OFET) made of as-received and purified fullerene C60. We find a strong dependence of the OFET threshold voltage (VT) on the density of traps present in the layer. In the case of the unpurified material, VT is reduced from 17.9 V to 4.7 V upon trap passivation by a dopant:C60 ratio of ∼10 -3, while the Ion/off current ratio remains high. This suggests that ultra-low doping can be used to effectively compensate impurity and defect-related traps.

Original languageEnglish (US)
Article number253303
JournalApplied Physics Letters
Volume101
Issue number25
DOIs
StatePublished - Dec 17 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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