@article{21a1ccf819154486b1750db9240a4be5,
title = "Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance",
abstract = "We investigate trap-state passivation by addition of ultra-low amounts of n-dopants in organic field-effect transistors (OFET) made of as-received and purified fullerene C60. We find a strong dependence of the OFET threshold voltage (VT) on the density of traps present in the layer. In the case of the unpurified material, VT is reduced from 17.9 V to 4.7 V upon trap passivation by a dopant:C60 ratio of ∼10 -3, while the Ion/off current ratio remains high. This suggests that ultra-low doping can be used to effectively compensate impurity and defect-related traps.",
author = "Selina Olthof and Sanjeev Singh and Mohapatra, {Swagat K.} and Stephen Barlow and Marder, {Seth R.} and Bernard Kippelen and Antoine Kahn",
note = "Funding Information: This work was supported by Solvay S.A., the Office of Naval Research (N00014-11-1-0313), and the National Science Foundation (DMR-1005892). S.O. acknowledges support from the German Academic Exchange Service (DAAD). S.R.M. and B.K. serve as consultants to Solvay and receive compensation for these services. This study could affect their personal financial status. The terms of this arrangement have been reviewed and approved by Georgia Tech in accordance with its conflict of interest policies.",
year = "2012",
month = dec,
day = "17",
doi = "10.1063/1.4772551",
language = "English (US)",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "25",
}