Abstract
We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7927-7930 |
| Number of pages | 4 |
| Journal | Physical Review B-Condensed Matter |
| Volume | 46 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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