Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

I. Brener; M. Olszakier; E. Cohen; E. Ehrenfreund; Arza Ron; L. Pfeiffer

doi:10.1103/PhysRevB.46.7927

Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

I. Brener, M. Olszakier, E. Cohen, E. Ehrenfreund, Arza Ron, L. Pfeiffer

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

Original language	English (US)
Pages (from-to)	7927-7930
Number of pages	4
Journal	Physical Review B
Volume	46
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.46.7927
State	Published - 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.46.7927

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title = "Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells",

abstract = "We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.",

author = "I. Brener and M. Olszakier and E. Cohen and E. Ehrenfreund and Arza Ron and L. Pfeiffer",

year = "1992",

doi = "10.1103/PhysRevB.46.7927",

language = "English (US)",

volume = "46",

pages = "7927--7930",

journal = "Physical Review B",

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publisher = "American Physical Society",

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TY - JOUR

T1 - Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

AU - Brener, I.

AU - Olszakier, M.

AU - Cohen, E.

AU - Ehrenfreund, E.

AU - Ron, Arza

AU - Pfeiffer, L.

PY - 1992

Y1 - 1992

N2 - We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

AB - We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

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U2 - 10.1103/PhysRevB.46.7927

DO - 10.1103/PhysRevB.46.7927

M3 - Article

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VL - 46

SP - 7927

EP - 7930

JO - Physical Review B

JF - Physical Review B

IS - 12

ER -

Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

Abstract

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