Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

I. Brener, M. Olszakier, E. Cohen, E. Ehrenfreund, Arza Ron, L. Pfeiffer

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

Original languageEnglish (US)
Pages (from-to)7927-7930
Number of pages4
JournalPhysical Review B
Volume46
Issue number12
DOIs
StatePublished - 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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