Partial density of unoccupied states and L2,3-x-ray absorption spectrum of bulk silicon and of the Si(1 1 1) 2 × 1 surface

A. Bianconi, R. Del Sole, A. Selloni, P. Chiaradia, M. Fanfoni, I. Davoli

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

The L2,3 surface absorption spectrum of the clean Si(1 1 1) 2 × 1 surface has been measured and compared with the bulk spectrum. The results are interpreted by comparison with tight binding calculations of the s density of states. The 2p core hole final state effect is shown to shift all absorption features in the bulk up to 3 eV above threshold by ≈ 0.3 eV. A surface feature 2.3 eV above the conduction band bottom has been identified.

Original languageEnglish (US)
Pages (from-to)1313-1316
Number of pages4
JournalSolid State Communications
Volume64
Issue number10
DOIs
StatePublished - Dec 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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