Partial density of unoccupied states and L2,3-x-ray absorption spectrum of bulk silicon and of the Si(1 1 1) 2 × 1 surface

A. Bianconi; R. Del Sole; A. Selloni; P. Chiaradia; M. Fanfoni; I. Davoli

doi:10.1016/0038-1098(87)90632-6

Partial density of unoccupied states and L_2,3-x-ray absorption spectrum of bulk silicon and of the Si(1 1 1) 2 × 1 surface

A. Bianconi, R. Del Sole, A. Selloni, P. Chiaradia, M. Fanfoni, I. Davoli

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The L_2,3 surface absorption spectrum of the clean Si(1 1 1) 2 × 1 surface has been measured and compared with the bulk spectrum. The results are interpreted by comparison with tight binding calculations of the s density of states. The 2p core hole final state effect is shown to shift all absorption features in the bulk up to 3 eV above threshold by ≈ 0.3 eV. A surface feature 2.3 eV above the conduction band bottom has been identified.

Original language	English (US)
Pages (from-to)	1313-1316
Number of pages	4
Journal	Solid State Communications
Volume	64
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(87)90632-6
State	Published - Dec 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(87)90632-6

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abstract = "The L2,3 surface absorption spectrum of the clean Si(1 1 1) 2 × 1 surface has been measured and compared with the bulk spectrum. The results are interpreted by comparison with tight binding calculations of the s density of states. The 2p core hole final state effect is shown to shift all absorption features in the bulk up to 3 eV above threshold by ≈ 0.3 eV. A surface feature 2.3 eV above the conduction band bottom has been identified.",

author = "A. Bianconi and {Del Sole}, R. and A. Selloni and P. Chiaradia and M. Fanfoni and I. Davoli",

year = "1987",

month = dec,

doi = "10.1016/0038-1098(87)90632-6",

language = "English (US)",

volume = "64",

pages = "1313--1316",

journal = "Solid State Communications",

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T1 - Partial density of unoccupied states and L2,3-x-ray absorption spectrum of bulk silicon and of the Si(1 1 1) 2 × 1 surface

AU - Bianconi, A.

AU - Del Sole, R.

AU - Selloni, A.

AU - Chiaradia, P.

AU - Fanfoni, M.

AU - Davoli, I.

PY - 1987/12

Y1 - 1987/12

N2 - The L2,3 surface absorption spectrum of the clean Si(1 1 1) 2 × 1 surface has been measured and compared with the bulk spectrum. The results are interpreted by comparison with tight binding calculations of the s density of states. The 2p core hole final state effect is shown to shift all absorption features in the bulk up to 3 eV above threshold by ≈ 0.3 eV. A surface feature 2.3 eV above the conduction band bottom has been identified.

AB - The L2,3 surface absorption spectrum of the clean Si(1 1 1) 2 × 1 surface has been measured and compared with the bulk spectrum. The results are interpreted by comparison with tight binding calculations of the s density of states. The 2p core hole final state effect is shown to shift all absorption features in the bulk up to 3 eV above threshold by ≈ 0.3 eV. A surface feature 2.3 eV above the conduction band bottom has been identified.

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U2 - 10.1016/0038-1098(87)90632-6

DO - 10.1016/0038-1098(87)90632-6

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JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Partial density of unoccupied states and L_2,3-x-ray absorption spectrum of bulk silicon and of the Si(1 1 1) 2 × 1 surface

Abstract

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