The L2,3 surface absorption spectrum of the clean Si(1 1 1) 2 × 1 surface has been measured and compared with the bulk spectrum. The results are interpreted by comparison with tight binding calculations of the s density of states. The 2p core hole final state effect is shown to shift all absorption features in the bulk up to 3 eV above threshold by ≈ 0.3 eV. A surface feature 2.3 eV above the conduction band bottom has been identified.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Dec 1987|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry