Abstract
The parasitic resistance in bottom-contact pentacene thin-film transistors (TFT) using water dispersible polyaniline electrodes was discussed. The parasitic resistance using the TFT's with different channel lengths were extracted. Water-dispersible polyaniline (PANI) was prepared by oxidative polymerization of aniline monomer in the presence of polymeric acid. Elastomeric stamps with inverse relief features compared to the final electrode patterns were fabricated using Sylgard 184 polydimethylsiloxane (PDMS) prepolymer. The majority of TFTs with polyaniline-poly(2-acrylamido-2-methyl-1-propane-sulfonic acid) PANI-PAAMPSA electrodes exhibited similar characteristics with mobilities in both linear regime and the saturation regime.
| Original language | English (US) |
|---|---|
| Pages | 1019-1021 |
| Number of pages | 3 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | 2004 AIChE Annual Meeting - Austin, TX, United States Duration: Nov 7 2004 → Nov 12 2004 |
Other
| Other | 2004 AIChE Annual Meeting |
|---|---|
| Country/Territory | United States |
| City | Austin, TX |
| Period | 11/7/04 → 11/12/04 |
All Science Journal Classification (ASJC) codes
- Engineering(all)