Parasitic resistance in bottom-contact pentacene thin-film transistors that use water-dispersible polyaniline electrodes

Kwana Seok Lee, Graciela B. Blanchet, Feng Gao, Yueh Lin Loo

Research output: Contribution to conferencePaper

Abstract

The parasitic resistance in bottom-contact pentacene thin-film transistors (TFT) using water dispersible polyaniline electrodes was discussed. The parasitic resistance using the TFT's with different channel lengths were extracted. Water-dispersible polyaniline (PANI) was prepared by oxidative polymerization of aniline monomer in the presence of polymeric acid. Elastomeric stamps with inverse relief features compared to the final electrode patterns were fabricated using Sylgard 184 polydimethylsiloxane (PDMS) prepolymer. The majority of TFTs with polyaniline-poly(2-acrylamido-2-methyl-1-propane-sulfonic acid) PANI-PAAMPSA electrodes exhibited similar characteristics with mobilities in both linear regime and the saturation regime.

Original languageEnglish (US)
Pages1019-1021
Number of pages3
StatePublished - 2004
Event2004 AIChE Annual Meeting - Austin, TX, United States
Duration: Nov 7 2004Nov 12 2004

Other

Other2004 AIChE Annual Meeting
CountryUnited States
CityAustin, TX
Period11/7/0411/12/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Lee, K. S., Blanchet, G. B., Gao, F., & Loo, Y. L. (2004). Parasitic resistance in bottom-contact pentacene thin-film transistors that use water-dispersible polyaniline electrodes. 1019-1021. Paper presented at 2004 AIChE Annual Meeting, Austin, TX, United States.