Parameters for feature evolution models in plasma etching from molecular dynamics simulation

B. A. Helmer, D. B. Graves, M. E. Barone

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


The impact of Si with incident energy Ei (0.1, 1, 5, 10, 20, and 50 eV) and angle θi (0° and 60° from the surface normal) into three model Si surfaces with varying degrees of F coverage (0 ML F, approximately 1 ML F, and approximately 2 ML F) was simulated using classical molecular dynamics (MD). From the simulation results, the probabilities for incident Si reflection and removal of surface Si and F were obtained as a function of Ei, θi, and F surface coverage. In general, these probabilities were observed to depend significantly on these parameters. This result implies that feature evolution simulations require surface reaction models with the necessary functionality in order to make quantitative predictions.

Original languageEnglish (US)
Pages (from-to)23-28
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
Externally publishedYes
EventProceedings of the Spring Meeting on MRS - San Francisco, CA, USA
Duration: Apr 17 1995Apr 20 1995

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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