Parameters for feature evolution models in plasma etching from molecular dynamics simulation

B. A. Helmer; D. B. Graves; M. E. Barone

doi:10.1557/proc-389-23

Parameters for feature evolution models in plasma etching from molecular dynamics simulation

B. A. Helmer, D. B. Graves, M. E. Barone

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The impact of Si with incident energy E_i (0.1, 1, 5, 10, 20, and 50 eV) and angle θ_i (0° and 60° from the surface normal) into three model Si surfaces with varying degrees of F coverage (0 ML F, approximately 1 ML F, and approximately 2 ML F) was simulated using classical molecular dynamics (MD). From the simulation results, the probabilities for incident Si reflection and removal of surface Si and F were obtained as a function of E_i, θ_i, and F surface coverage. In general, these probabilities were observed to depend significantly on these parameters. This result implies that feature evolution simulations require surface reaction models with the necessary functionality in order to make quantitative predictions.

Original language	English (US)
Pages (from-to)	23-28
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	389
DOIs	https://doi.org/10.1557/proc-389-23
State	Published - 1995
Externally published	Yes
Event	Proceedings of the Spring Meeting on MRS - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 20 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-389-23

Cite this

@article{66fd8f0a09674f718435f98a299b4c09,

title = "Parameters for feature evolution models in plasma etching from molecular dynamics simulation",

abstract = "The impact of Si with incident energy Ei (0.1, 1, 5, 10, 20, and 50 eV) and angle θi (0° and 60° from the surface normal) into three model Si surfaces with varying degrees of F coverage (0 ML F, approximately 1 ML F, and approximately 2 ML F) was simulated using classical molecular dynamics (MD). From the simulation results, the probabilities for incident Si reflection and removal of surface Si and F were obtained as a function of Ei, θi, and F surface coverage. In general, these probabilities were observed to depend significantly on these parameters. This result implies that feature evolution simulations require surface reaction models with the necessary functionality in order to make quantitative predictions.",

author = "Helmer, {B. A.} and Graves, {D. B.} and Barone, {M. E.}",

year = "1995",

doi = "10.1557/proc-389-23",

language = "English (US)",

volume = "389",

pages = "23--28",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the Spring Meeting on MRS ; Conference date: 17-04-1995 Through 20-04-1995",

}

TY - JOUR

T1 - Parameters for feature evolution models in plasma etching from molecular dynamics simulation

AU - Helmer, B. A.

AU - Graves, D. B.

AU - Barone, M. E.

PY - 1995

Y1 - 1995

N2 - The impact of Si with incident energy Ei (0.1, 1, 5, 10, 20, and 50 eV) and angle θi (0° and 60° from the surface normal) into three model Si surfaces with varying degrees of F coverage (0 ML F, approximately 1 ML F, and approximately 2 ML F) was simulated using classical molecular dynamics (MD). From the simulation results, the probabilities for incident Si reflection and removal of surface Si and F were obtained as a function of Ei, θi, and F surface coverage. In general, these probabilities were observed to depend significantly on these parameters. This result implies that feature evolution simulations require surface reaction models with the necessary functionality in order to make quantitative predictions.

AB - The impact of Si with incident energy Ei (0.1, 1, 5, 10, 20, and 50 eV) and angle θi (0° and 60° from the surface normal) into three model Si surfaces with varying degrees of F coverage (0 ML F, approximately 1 ML F, and approximately 2 ML F) was simulated using classical molecular dynamics (MD). From the simulation results, the probabilities for incident Si reflection and removal of surface Si and F were obtained as a function of Ei, θi, and F surface coverage. In general, these probabilities were observed to depend significantly on these parameters. This result implies that feature evolution simulations require surface reaction models with the necessary functionality in order to make quantitative predictions.

UR - http://www.scopus.com/inward/record.url?scp=0029179370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029179370&partnerID=8YFLogxK

U2 - 10.1557/proc-389-23

DO - 10.1557/proc-389-23

M3 - Conference article

AN - SCOPUS:0029179370

SN - 0272-9172

VL - 389

SP - 23

EP - 28

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the Spring Meeting on MRS

Y2 - 17 April 1995 through 20 April 1995

ER -

Parameters for feature evolution models in plasma etching from molecular dynamics simulation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this