Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators

Hung Sik Cho, Paul Richard Prucnal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electroabsorption in GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures has been studied extensively due to the potential application to optical modulators and switches. Room temperature optical modulation induced by electroabsorption has been demonstrated, but the parameters of the MQW have been fixed at an Al mole fraction x ≈ 0.3 and well and barrier thickness Lz ≈ Lz ≈ 100 angstrom, respectively. Since modulator performance is determined by electroabsorption, which in turn strongly depends on the MQW parameters, improvement in performance is expected, compared with that obtained by using MQWs with conventional parameters (x ≈ 0.3 and Lz ≈ Lb ≈ 100 angstrom) by adjusting the MQW parameters appropriately. Calculations of the optimum parameters are presented.

Original languageEnglish (US)
Title of host publicationCONFERENCE ON LASERS AND ELECTRO-0PTICS
Editors Anon
PublisherPubl by IEEE
Pages98-99
Number of pages2
ISBN (Print)1557520860
StatePublished - Dec 1 1989
Externally publishedYes
EventSummaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA
Duration: Apr 24 1989Apr 28 1989

Other

OtherSummaries of Papers Presented at the Conference on Lasers and Electro-Optics
CityBaltimore, MD, USA
Period4/24/894/28/89

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Cho, H. S., & Prucnal, P. R. (1989). Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators. In Anon (Ed.), CONFERENCE ON LASERS AND ELECTRO-0PTICS (pp. 98-99). Publ by IEEE.