Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators

Hung Sik Cho; Paul R. Prucnal

Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electroabsorption in GaAs/Al_xGa_1-xAs multiple-quantum-well (MQW) structures has been studied extensively due to the potential application to optical modulators and switches. Room temperature optical modulation induced by electroabsorption has been demonstrated, but the parameters of the MQW have been fixed at an Al mole fraction x ≈ 0.3 and well and barrier thickness L_z ≈ L_z ≈ 100 angstrom, respectively. Since modulator performance is determined by electroabsorption, which in turn strongly depends on the MQW parameters, improvement in performance is expected, compared with that obtained by using MQWs with conventional parameters (x ≈ 0.3 and L_z ≈ L_b ≈ 100 angstrom) by adjusting the MQW parameters appropriately. Calculations of the optimum parameters are presented.

Original language	English (US)
Title of host publication	CONFERENCE ON LASERS AND ELECTRO-0PTICS
Editors	Anon
Publisher	Publ by IEEE
Pages	98-99
Number of pages	2
ISBN (Print)	1557520860
State	Published - 1989
Externally published	Yes
Event	Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA Duration: Apr 24 1989 → Apr 28 1989

Publication series

Name	CONFERENCE ON LASERS AND ELECTRO-0PTICS

Other

Other	Summaries of Papers Presented at the Conference on Lasers and Electro-Optics
City	Baltimore, MD, USA
Period	4/24/89 → 4/28/89

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@inproceedings{cd9b893d62554b0cb86e28b79280adf7,

title = "Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators",

abstract = "Electroabsorption in GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures has been studied extensively due to the potential application to optical modulators and switches. Room temperature optical modulation induced by electroabsorption has been demonstrated, but the parameters of the MQW have been fixed at an Al mole fraction x ≈ 0.3 and well and barrier thickness Lz ≈ Lz ≈ 100 angstrom, respectively. Since modulator performance is determined by electroabsorption, which in turn strongly depends on the MQW parameters, improvement in performance is expected, compared with that obtained by using MQWs with conventional parameters (x ≈ 0.3 and Lz ≈ Lb ≈ 100 angstrom) by adjusting the MQW parameters appropriately. Calculations of the optimum parameters are presented.",

author = "Cho, {Hung Sik} and Prucnal, {Paul R.}",

year = "1989",

language = "English (US)",

isbn = "1557520860",

series = "CONFERENCE ON LASERS AND ELECTRO-0PTICS",

publisher = "Publ by IEEE",

pages = "98--99",

editor = "Anon",

booktitle = "CONFERENCE ON LASERS AND ELECTRO-0PTICS",

note = "Summaries of Papers Presented at the Conference on Lasers and Electro-Optics ; Conference date: 24-04-1989 Through 28-04-1989",

}

TY - GEN

T1 - Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators

AU - Cho, Hung Sik

AU - Prucnal, Paul R.

PY - 1989

Y1 - 1989

N2 - Electroabsorption in GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures has been studied extensively due to the potential application to optical modulators and switches. Room temperature optical modulation induced by electroabsorption has been demonstrated, but the parameters of the MQW have been fixed at an Al mole fraction x ≈ 0.3 and well and barrier thickness Lz ≈ Lz ≈ 100 angstrom, respectively. Since modulator performance is determined by electroabsorption, which in turn strongly depends on the MQW parameters, improvement in performance is expected, compared with that obtained by using MQWs with conventional parameters (x ≈ 0.3 and Lz ≈ Lb ≈ 100 angstrom) by adjusting the MQW parameters appropriately. Calculations of the optimum parameters are presented.

AB - Electroabsorption in GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures has been studied extensively due to the potential application to optical modulators and switches. Room temperature optical modulation induced by electroabsorption has been demonstrated, but the parameters of the MQW have been fixed at an Al mole fraction x ≈ 0.3 and well and barrier thickness Lz ≈ Lz ≈ 100 angstrom, respectively. Since modulator performance is determined by electroabsorption, which in turn strongly depends on the MQW parameters, improvement in performance is expected, compared with that obtained by using MQWs with conventional parameters (x ≈ 0.3 and Lz ≈ Lb ≈ 100 angstrom) by adjusting the MQW parameters appropriately. Calculations of the optimum parameters are presented.

UR - http://www.scopus.com/inward/record.url?scp=0024873049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024873049&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0024873049

SN - 1557520860

T3 - CONFERENCE ON LASERS AND ELECTRO-0PTICS

SP - 98

EP - 99

BT - CONFERENCE ON LASERS AND ELECTRO-0PTICS

A2 - Anon, null

PB - Publ by IEEE

T2 - Summaries of Papers Presented at the Conference on Lasers and Electro-Optics

Y2 - 24 April 1989 through 28 April 1989

ER -

Parameter optimization of GaAs/AlGaAs multiple quantum well electroabsorption modulators

Abstract

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