Abstract
Electroabsorption in GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures has been studied extensively due to the potential application to optical modulators and switches. Room temperature optical modulation induced by electroabsorption has been demonstrated, but the parameters of the MQW have been fixed at an Al mole fraction x ≈ 0.3 and well and barrier thickness Lz ≈ Lz ≈ 100 angstrom, respectively. Since modulator performance is determined by electroabsorption, which in turn strongly depends on the MQW parameters, improvement in performance is expected, compared with that obtained by using MQWs with conventional parameters (x ≈ 0.3 and Lz ≈ Lb ≈ 100 angstrom) by adjusting the MQW parameters appropriately. Calculations of the optimum parameters are presented.
Original language | English (US) |
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Title of host publication | CONFERENCE ON LASERS AND ELECTRO-0PTICS |
Editors | Anon |
Publisher | Publ by IEEE |
Pages | 98-99 |
Number of pages | 2 |
ISBN (Print) | 1557520860 |
State | Published - Dec 1 1989 |
Externally published | Yes |
Event | Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA Duration: Apr 24 1989 → Apr 28 1989 |
Other
Other | Summaries of Papers Presented at the Conference on Lasers and Electro-Optics |
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City | Baltimore, MD, USA |
Period | 4/24/89 → 4/28/89 |
All Science Journal Classification (ASJC) codes
- Engineering(all)