Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Jongsoo Yoon; C. C. Li; D. Shahar; D. C. Tsui; M. Shayegan

doi:10.1103/PhysRevLett.84.4421

Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Jongsoo Yoon
, C. C. Li
, D. Shahar
, D. C. Tsui
, M. Shayegan

Research output: Contribution to journal › Article › peer-review

127 Scopus citations

Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

Original language	English (US)
Pages (from-to)	4421-4424
Number of pages	4
Journal	Physical review letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.84.4421
State	Published - 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.84.4421

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title = "Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs",

abstract = "A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.",

author = "Jongsoo Yoon and Li, \{C. C.\} and D. Shahar and Tsui, \{D. C.\} and M. Shayegan",

year = "2000",

doi = "10.1103/PhysRevLett.84.4421",

language = "English (US)",

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pages = "4421--4424",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

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T1 - Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

AU - Yoon, Jongsoo

AU - Li, C. C.

AU - Shahar, D.

AU - Tsui, D. C.

AU - Shayegan, M.

PY - 2000

Y1 - 2000

N2 - A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

AB - A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

UR - https://www.scopus.com/pages/publications/0000022381

UR - https://www.scopus.com/pages/publications/0000022381#tab=citedBy

U2 - 10.1103/PhysRevLett.84.4421

DO - 10.1103/PhysRevLett.84.4421

M3 - Article

C2 - 10990701

AN - SCOPUS:0000022381

SN - 0031-9007

VL - 84

SP - 4421

EP - 4424

JO - Physical review letters

JF - Physical review letters

IS - 19

ER -

Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Abstract

All Science Journal Classification (ASJC) codes

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