A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - 2000|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)