Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Jongsoo Yoon; C. C. Li; D. Shahar; D. C. Tsui; M. Shayegan

doi:10.1103/PhysRevLett.84.4421

Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Jongsoo Yoon, C. C. Li, D. Shahar, D. C. Tsui, M. Shayegan

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127 Scopus citations

Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

Original language	English (US)
Pages (from-to)	4421-4424
Number of pages	4
Journal	Physical review letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.84.4421
State	Published - 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.84.4421

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title = "Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs",

abstract = "A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.",

author = "Jongsoo Yoon and Li, {C. C.} and D. Shahar and Tsui, {D. C.} and M. Shayegan",

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AU - Li, C. C.

AU - Shahar, D.

AU - Tsui, D. C.

AU - Shayegan, M.

PY - 2000

Y1 - 2000

N2 - A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

AB - A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

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JO - Physical review letters

JF - Physical review letters

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Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Abstract

All Science Journal Classification (ASJC) codes

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