Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs

Jongsoo Yoon, C. C. Li, D. Shahar, D. C. Tsui, M. Shayegan

Research output: Contribution to journalArticle

123 Scopus citations

Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

Original languageEnglish (US)
Pages (from-to)4421-4424
Number of pages4
JournalPhysical review letters
Volume84
Issue number19
DOIs
StatePublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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