Abstract
Local-density-functional calculations of the pairing of H atoms on the (100)-2×1 surface of Si are presented. We find that significant interactions between neighboring dimers along a row are present, favoring configurations where H-unpaired dimers are in the same row and have the H-atoms all on the same side. We discuss how these effects can contribute to the effective H-pairing energies determined experimentally.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 11191-11195 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 49 |
| Issue number | 16 |
| DOIs | |
| State | Published - 1994 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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