Abstract
Local-density-functional calculations of the pairing of H atoms on the (100)-2×1 surface of Si are presented. We find that significant interactions between neighboring dimers along a row are present, favoring configurations where H-unpaired dimers are in the same row and have the H-atoms all on the same side. We discuss how these effects can contribute to the effective H-pairing energies determined experimentally.
Original language | English (US) |
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Pages (from-to) | 11191-11195 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 49 |
Issue number | 16 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics