P-type surface transfer doping of oxidised silicon terminated (100) diamond

Michael J. Sear; Alex K. Schenk; Anton Tadich; Alastair Stacey; Christopher I. Pakes

doi:10.1063/1.4973602

P-type surface transfer doping of oxidised silicon terminated (100) diamond

Michael J. Sear
, Alex K. Schenk
, Anton Tadich
, Alastair Stacey
, Christopher I. Pakes

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

High-resolution core-level photoemission was used to examine the interaction between the oxidised silicon-terminated diamond (100) surface and the molecular acceptor MoO₃. An observed downward shift in the Fermi level position, accompanied by the appearance of two distinct charge states of MoO₃, indicates charge transfer from the surface into the MoO₃ adlayer in the form of surface transfer doping with a concurrent accumulation of holes in the diamond.

Original language	English (US)
Article number	011605
Journal	Applied Physics Letters
Volume	110
Issue number	1
DOIs	https://doi.org/10.1063/1.4973602
State	Published - Jan 4 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4973602

Cite this

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title = "P-type surface transfer doping of oxidised silicon terminated (100) diamond",

abstract = "High-resolution core-level photoemission was used to examine the interaction between the oxidised silicon-terminated diamond (100) surface and the molecular acceptor MoO3. An observed downward shift in the Fermi level position, accompanied by the appearance of two distinct charge states of MoO3, indicates charge transfer from the surface into the MoO3 adlayer in the form of surface transfer doping with a concurrent accumulation of holes in the diamond.",

author = "Sear, \{Michael J.\} and Schenk, \{Alex K.\} and Anton Tadich and Alastair Stacey and Pakes, \{Christopher I.\}",

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T1 - P-type surface transfer doping of oxidised silicon terminated (100) diamond

AU - Sear, Michael J.

AU - Schenk, Alex K.

AU - Tadich, Anton

AU - Stacey, Alastair

AU - Pakes, Christopher I.

PY - 2017/1/4

Y1 - 2017/1/4

N2 - High-resolution core-level photoemission was used to examine the interaction between the oxidised silicon-terminated diamond (100) surface and the molecular acceptor MoO3. An observed downward shift in the Fermi level position, accompanied by the appearance of two distinct charge states of MoO3, indicates charge transfer from the surface into the MoO3 adlayer in the form of surface transfer doping with a concurrent accumulation of holes in the diamond.

AB - High-resolution core-level photoemission was used to examine the interaction between the oxidised silicon-terminated diamond (100) surface and the molecular acceptor MoO3. An observed downward shift in the Fermi level position, accompanied by the appearance of two distinct charge states of MoO3, indicates charge transfer from the surface into the MoO3 adlayer in the form of surface transfer doping with a concurrent accumulation of holes in the diamond.

UR - https://www.scopus.com/pages/publications/85009124444

UR - https://www.scopus.com/pages/publications/85009124444#tab=citedBy

U2 - 10.1063/1.4973602

DO - 10.1063/1.4973602

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 011605

ER -

P-type surface transfer doping of oxidised silicon terminated (100) diamond

Abstract

All Science Journal Classification (ASJC) codes

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