@article{88c85800c28c4f6f8ecfd2e502fc0a78,
title = "P-Type molecular doping by charge transfer in halide perovskite",
abstract = "Electronic technologies critically rely on the ability to broadly dope the active semiconductor; yet the promising class of halide perovskite semiconductors so far does not allow for significant control over carrier type (p- or n-) and density. The molecular doping approach offers important opportunities for generating free carriers through charge transfer. In this work, we demonstrate effective p-doping of MAPb0.5Sn0.5I3 films using the molecular dopant F4TCNQ as a grain boundary coating, offering a conductivity and hole density tuning range of up to five orders of magnitude, associated with a 190 meV Fermi level down-shift. While charge transfer between MAPb0.5Sn0.5I3 and F4TCNQ appears efficient, dopant ionization decreases with increasing Pb content, highlighting the need for appropriate energy offset between host and dopant molecule. Finally, we show that electrical p-doping impacts the perovskite optoelectronic properties, with a hole recombination lifetime increase of over one order of magnitude, suggesting passivation of deep traps.",
author = "Julie Euvrard and Oki Gunawan and Xinjue Zhong and Harvey, {Steven P.} and Antoine Kahn and Mitzi, {David B.}",
note = "Funding Information: This work was supported by the National Science Foundation under grant numbers DMR-2004869 and DMR-1709294. The work was performed in part at the Duke University Shared Materials Instrumentation Facility (SMIF), a member of the North Carolina Research Triangle Nanotechnology Network (RTNN), which is supported by the National Science Foundation (award number ECCS-2025064) as part of the National Nanotechnology Coordinated Infrastructure (NNCI). Work at Princeton University was supported by a grant from the US-Israel Binational Science Foundation (BSF Grant No. 2018349), and by a grant of the National Science Foundation (DMR-1807797). This work was authored in part by the National Renewable Energy Laboratory, operated by Alliance for Sustainable Energy, LLC, for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. The TOF-SIMS was funded as part of the Center for Hybrid Organic Inorganic Semiconductors for Energy (CHOISE), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Basic Energy Sciences (BES), Office of Science. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. Publisher Copyright: {\textcopyright} 2021 The Royal Society of Chemistry.",
year = "2021",
month = may,
day = "7",
doi = "10.1039/d1ma00160d",
language = "English (US)",
volume = "2",
pages = "2956--2965",
journal = "Materials Advances",
issn = "2633-5409",
publisher = "Royal Society of Chemistry",
number = "9",
}