Abstract
The p-channel thin film transistor (TFT) made in directly deposited microcrystalline silicon (μc-Si) is reported. The channel silicon is made by plasma enhanced vapor deposition. A four level mask process with specially designed mask was used in the TFT fabrication. The transfer and output characteristics of the p-channel TFT are shown.
| Original language | English (US) |
|---|---|
| Pages | 168-169 |
| Number of pages | 2 |
| State | Published - 1999 |
| Event | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: Jun 28 1999 → Jun 30 1999 |
Other
| Other | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) |
|---|---|
| City | Santa Barbara, CA, USA |
| Period | 6/28/99 → 6/30/99 |
All Science Journal Classification (ASJC) codes
- General Engineering