P-channel thin film transistor of microcrystalline silicon directly deposited at 320 °C

Y. Chen, K. Pangal, James Christopher Sturm, S. Wagner

Research output: Contribution to conferencePaper

Abstract

The p-channel thin film transistor (TFT) made in directly deposited microcrystalline silicon (μc-Si) is reported. The channel silicon is made by plasma enhanced vapor deposition. A four level mask process with specially designed mask was used in the TFT fabrication. The transfer and output characteristics of the p-channel TFT are shown.

Original languageEnglish (US)
Pages168-169
Number of pages2
StatePublished - Dec 1 1999
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: Jun 28 1999Jun 30 1999

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period6/28/996/30/99

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chen, Y., Pangal, K., Sturm, J. C., & Wagner, S. (1999). P-channel thin film transistor of microcrystalline silicon directly deposited at 320 °C. 168-169. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .