p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C

Engineering & Materials Science

• Amorphous silicon 12%
• Digital circuits 9%
• Metals 34%
• Microcrystalline silicon 100%
• Plasma enhanced chemical vapor deposition 12%
• Silicon oxides 77%
• Temperature 10%
• Thin film transistors 68%

Physics & Astronomy

• amorphous silicon 8%
• digital electronics 11%
• excitation 4%
• inverters 66%
• metal oxides 51%
• silicon 28%
• temperature 5%
• thin films 27%
• transistors 42%
• vapor deposition 6%

Chemical Compounds

• Amorphous Silicon 12%
• Block Like Crystal 6%
• Liquid Film 4%
• Microcrystallinity 58%
• Mixture 3%
• Plasma Enhanced Chemical Vapour Deposition 10%