Abstract
We report a p channel thin film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). The μc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH4, SiF4 and H2, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the μc-Si is 320°C and the highest post-deposition TFT process temperature is 280°C. By integrating this p TFT on a single μc-Si film with an n channel TFT, we fabricated a complementary metal-oxide-silicon (CMOS) inverter of deposited μc-Si. The p channel μc-Si TFT represents a breakthrough in low-temperature Si TFT technology because p channel TFTs of a-Si:H have not been available to date. The integrated CMOS inverter is the building block of a new digital circuit technology based on directly deposited μc-Si.
Original language | English (US) |
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Pages (from-to) | 1274-1278 |
Number of pages | 5 |
Journal | Journal of Non-Crystalline Solids |
Volume | 266-269 B |
DOIs | |
State | Published - May 1 2000 |
Event | 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: Aug 23 1999 → Aug 27 1999 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry