p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C

Y. Chen; K. Pangal; J. C. Sturm; S. Wagner

doi:10.1016/s0022-3093(99)00799-1

p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C

Y. Chen, K. Pangal, J. C. Sturm, S. Wagner

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

We report a p channel thin film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). The μc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH₄, SiF₄ and H₂, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the μc-Si is 320°C and the highest post-deposition TFT process temperature is 280°C. By integrating this p TFT on a single μc-Si film with an n channel TFT, we fabricated a complementary metal-oxide-silicon (CMOS) inverter of deposited μc-Si. The p channel μc-Si TFT represents a breakthrough in low-temperature Si TFT technology because p channel TFTs of a-Si:H have not been available to date. The integrated CMOS inverter is the building block of a new digital circuit technology based on directly deposited μc-Si.

Original language	English (US)
Pages (from-to)	1274-1278
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 B
DOIs	https://doi.org/10.1016/s0022-3093(99)00799-1
State	Published - May 1 2000
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: Aug 23 1999 → Aug 27 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/s0022-3093(99)00799-1

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@article{859d569d328945c4aa599f6b1fbaa601,

title = "p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C",

abstract = "We report a p channel thin film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). The μc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH4, SiF4 and H2, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the μc-Si is 320°C and the highest post-deposition TFT process temperature is 280°C. By integrating this p TFT on a single μc-Si film with an n channel TFT, we fabricated a complementary metal-oxide-silicon (CMOS) inverter of deposited μc-Si. The p channel μc-Si TFT represents a breakthrough in low-temperature Si TFT technology because p channel TFTs of a-Si:H have not been available to date. The integrated CMOS inverter is the building block of a new digital circuit technology based on directly deposited μc-Si.",

author = "Y. Chen and K. Pangal and Sturm, {J. C.} and S. Wagner",

year = "2000",

month = may,

day = "1",

doi = "10.1016/s0022-3093(99)00799-1",

language = "English (US)",

volume = "266-269 B",

pages = "1274--1278",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

note = "18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

}

TY - JOUR

T1 - p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C

AU - Chen, Y.

AU - Pangal, K.

AU - Sturm, J. C.

AU - Wagner, S.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - We report a p channel thin film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). The μc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH4, SiF4 and H2, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the μc-Si is 320°C and the highest post-deposition TFT process temperature is 280°C. By integrating this p TFT on a single μc-Si film with an n channel TFT, we fabricated a complementary metal-oxide-silicon (CMOS) inverter of deposited μc-Si. The p channel μc-Si TFT represents a breakthrough in low-temperature Si TFT technology because p channel TFTs of a-Si:H have not been available to date. The integrated CMOS inverter is the building block of a new digital circuit technology based on directly deposited μc-Si.

AB - We report a p channel thin film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). The μc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH4, SiF4 and H2, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the μc-Si is 320°C and the highest post-deposition TFT process temperature is 280°C. By integrating this p TFT on a single μc-Si film with an n channel TFT, we fabricated a complementary metal-oxide-silicon (CMOS) inverter of deposited μc-Si. The p channel μc-Si TFT represents a breakthrough in low-temperature Si TFT technology because p channel TFTs of a-Si:H have not been available to date. The integrated CMOS inverter is the building block of a new digital circuit technology based on directly deposited μc-Si.

UR - http://www.scopus.com/inward/record.url?scp=0000521779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000521779&partnerID=8YFLogxK

U2 - 10.1016/s0022-3093(99)00799-1

DO - 10.1016/s0022-3093(99)00799-1

M3 - Conference article

AN - SCOPUS:0000521779

SN - 0022-3093

VL - 266-269 B

SP - 1274

EP - 1278

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C

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