p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320°C

Y. Chen, K. Pangal, J. C. Sturm, S. Wagner

Research output: Contribution to journalConference article

16 Scopus citations

Abstract

We report a p channel thin film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). The μc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH4, SiF4 and H2, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the μc-Si is 320°C and the highest post-deposition TFT process temperature is 280°C. By integrating this p TFT on a single μc-Si film with an n channel TFT, we fabricated a complementary metal-oxide-silicon (CMOS) inverter of deposited μc-Si. The p channel μc-Si TFT represents a breakthrough in low-temperature Si TFT technology because p channel TFTs of a-Si:H have not been available to date. The integrated CMOS inverter is the building block of a new digital circuit technology based on directly deposited μc-Si.

Original languageEnglish (US)
Pages (from-to)1274-1278
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 B
DOIs
StatePublished - May 1 2000
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States
Duration: Aug 23 1999Aug 27 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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