Abstract
High-frequency signals have important applications in large-area hybrid systems, enabling efficient wireless transmission of power and information. We report zinc-oxide thin-film transistor (ZnO TFT) cross-coupled LC oscillator circuits on glass and 3.5-pm-thick polyimide substrates that achieve oscillation frequencies as high as 35 MHz and 17 MHz, respectively. The TFTs are designed for high unity power-gain frequency fMAX by minimizing gate resistance and device capacitances. In a resonant oscillator topology, this enables oscillation well above the cutoff frequency fT of the TFTs. Oscillators on plastic benefit from the improved dimensional stability of spin-cast ultrathin substrates, which allows TFTs on these substrates to have gate resistances and device capacitances comparable to TFTs on glass.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 207-210 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 47 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2016 |
| Event | 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States Duration: May 22 2016 → May 27 2016 |
All Science Journal Classification (ASJC) codes
- General Engineering
Keywords
- Cutoff frequency (fT)
- Flexible electronics
- Large area electronics (LAE)
- Oxide thin-film transistor (TFT)
- Plasma-enhanced atomic layer deposition (PEALD)
- TFT circuits
- Thin-film/CMOS hybrid systems
- Unity power gain frequency (MX)
- Zinc oxide