TY - JOUR
T1 - Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
AU - Afsar, Yasmin
AU - Tang, Jenny
AU - Rieutort-Louis, Warren
AU - Huang, Liechao
AU - Hu, Yingzhe
AU - Sanz-Robinson, Josue
AU - Wagner, Sigurd
AU - Verma, Naveen
AU - Sturm, James C.
N1 - Funding Information:
The authors thank the National Science Foundation for supporting this research (Grants ECCS-1202168 and CCF-1218206), the Princeton Program in Plasma Science and Technology (Grant DE-AC02_09CH11466), and Prof. T. N. Jackson and his students Yangyang Liu and Israel Ramirez for their guidance and support.
Publisher Copyright:
© 2016 SID.
PY - 2016
Y1 - 2016
N2 - High-frequency signals have important applications in large-area hybrid systems, enabling efficient wireless transmission of power and information. We report zinc-oxide thin-film transistor (ZnO TFT) cross-coupled LC oscillator circuits on glass and 3.5-pm-thick polyimide substrates that achieve oscillation frequencies as high as 35 MHz and 17 MHz, respectively. The TFTs are designed for high unity power-gain frequency fMAX by minimizing gate resistance and device capacitances. In a resonant oscillator topology, this enables oscillation well above the cutoff frequency fT of the TFTs. Oscillators on plastic benefit from the improved dimensional stability of spin-cast ultrathin substrates, which allows TFTs on these substrates to have gate resistances and device capacitances comparable to TFTs on glass.
AB - High-frequency signals have important applications in large-area hybrid systems, enabling efficient wireless transmission of power and information. We report zinc-oxide thin-film transistor (ZnO TFT) cross-coupled LC oscillator circuits on glass and 3.5-pm-thick polyimide substrates that achieve oscillation frequencies as high as 35 MHz and 17 MHz, respectively. The TFTs are designed for high unity power-gain frequency fMAX by minimizing gate resistance and device capacitances. In a resonant oscillator topology, this enables oscillation well above the cutoff frequency fT of the TFTs. Oscillators on plastic benefit from the improved dimensional stability of spin-cast ultrathin substrates, which allows TFTs on these substrates to have gate resistances and device capacitances comparable to TFTs on glass.
KW - Cutoff frequency (fT)
KW - Flexible electronics
KW - Large area electronics (LAE)
KW - Oxide thin-film transistor (TFT)
KW - Plasma-enhanced atomic layer deposition (PEALD)
KW - TFT circuits
KW - Thin-film/CMOS hybrid systems
KW - Unity power gain frequency (MX)
KW - Zinc oxide
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U2 - 10.1002/SDTP.10638
DO - 10.1002/SDTP.10638
M3 - Conference article
AN - SCOPUS:85048132893
SN - 0097-966X
VL - 47
SP - 207
EP - 210
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - 1
T2 - 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016
Y2 - 22 May 2016 through 27 May 2016
ER -