Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (EF) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75-0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Dec 1 1988|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)