Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface

D. Mao; K. Young; K. Stiles; A. Kahn

doi:10.1063/1.341198

Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface

D. Mao, K. Young, K. Stiles, A. Kahn

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Abstract

Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (E_F) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75-0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of E_F leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.

Original language	English (US)
Pages (from-to)	4777-4780
Number of pages	4
Journal	Journal of Applied Physics
Volume	64
Issue number	9
DOIs	https://doi.org/10.1063/1.341198
State	Published - 1988

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.341198

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title = "Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface",

abstract = "Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (EF) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75-0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.",

author = "D. Mao and K. Young and K. Stiles and A. Kahn",

year = "1988",

doi = "10.1063/1.341198",

language = "English (US)",

volume = "64",

pages = "4777--4780",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface

AU - Mao, D.

AU - Young, K.

AU - Stiles, K.

AU - Kahn, A.

PY - 1988

Y1 - 1988

N2 - Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (EF) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75-0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.

AB - Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (EF) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75-0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.

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EP - 4780

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface

Abstract

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