Overlayer metallicity and Fermi-level pinning at the Ca-GaAs(110) interface

D. Mao, K. Young, K. Stiles, Antoine Kahn

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Abstract

Photoemission spectroscopy is used to study chemistry and band bending at the Ca-GaAs(110) interface as a function of metal coverage. An intermediate position of the Fermi level (EF) resulting from the formation of adsorbate-induced states and native defects is found at low coverage at 0.75-0.9 eV above the top of the valence-band maximum (VBM). An additional abrupt shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface supports Schottky-barrier models based on gap states induced or modified by the metal.

Original languageEnglish (US)
Pages (from-to)4777-4780
Number of pages4
JournalJournal of Applied Physics
Volume64
Issue number9
DOIs
StatePublished - Dec 1 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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