Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning

C. Gmachl, A. Kock, A. Golshani, E. Gornik, M. Rosenberger, J. F. Walker

Research output: Contribution to conferencePaper

Abstract

The paper discusses the laser intensity modulation arising in frequency tuning experiments in the VCSEL. The laser dioxide contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum wells in the active region. Three types of modulator diodes were tested: a graded index (Al)GaAs p-n-junction, an (Al)GaAs p-i-n junction, and a GaAs/AlGaAs-double-heterojunction. This is of interest for the development of high performance frequency tunable VCSELs where a broad continuous modulation of the laser wavelength is required with only a small variation of the laser power. On the other hand strong intensity modulation leads to a useful mode switching in multi-mode VCSELs.

Original languageEnglish (US)
StatePublished - Dec 1 1994
Externally publishedYes
EventProceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth
Duration: Aug 28 1994Sep 2 1994

Other

OtherProceedings of the 1994 Conference on Lasers and Electro-Optics Europe
CityAmsterdam, Neth
Period8/28/949/2/94

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Gmachl, C., Kock, A., Golshani, A., Gornik, E., Rosenberger, M., & Walker, J. F. (1994). Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning. Paper presented at Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe, Amsterdam, Neth, .