Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning

C. Gmachl; A. Kock; A. Golshani; E. Gornik; M. Rosenberger; J. F. Walker

Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning

C. Gmachl, A. Kock, A. Golshani, E. Gornik, M. Rosenberger, J. F. Walker

Research output: Contribution to conference › Paper › peer-review

Abstract

The paper discusses the laser intensity modulation arising in frequency tuning experiments in the VCSEL. The laser dioxide contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum wells in the active region. Three types of modulator diodes were tested: a graded index (Al)GaAs p-n-junction, an (Al)GaAs p-i-n junction, and a GaAs/AlGaAs-double-heterojunction. This is of interest for the development of high performance frequency tunable VCSELs where a broad continuous modulation of the laser wavelength is required with only a small variation of the laser power. On the other hand strong intensity modulation leads to a useful mode switching in multi-mode VCSELs.

Original language	English (US)
Pages	p 197
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth Duration: Aug 28 1994 → Sep 2 1994

Other

Other	Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe
City	Amsterdam, Neth
Period	8/28/94 → 9/2/94

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

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title = "Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning",

abstract = "The paper discusses the laser intensity modulation arising in frequency tuning experiments in the VCSEL. The laser dioxide contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum wells in the active region. Three types of modulator diodes were tested: a graded index (Al)GaAs p-n-junction, an (Al)GaAs p-i-n junction, and a GaAs/AlGaAs-double-heterojunction. This is of interest for the development of high performance frequency tunable VCSELs where a broad continuous modulation of the laser wavelength is required with only a small variation of the laser power. On the other hand strong intensity modulation leads to a useful mode switching in multi-mode VCSELs.",

author = "C. Gmachl and A. Kock and A. Golshani and E. Gornik and M. Rosenberger and Walker, {J. F.}",

year = "1994",

language = "English (US)",

pages = "p 197",

note = "Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe ; Conference date: 28-08-1994 Through 02-09-1994",

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TY - CONF

T1 - Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning

AU - Gmachl, C.

AU - Kock, A.

AU - Golshani, A.

AU - Gornik, E.

AU - Rosenberger, M.

AU - Walker, J. F.

PY - 1994

Y1 - 1994

N2 - The paper discusses the laser intensity modulation arising in frequency tuning experiments in the VCSEL. The laser dioxide contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum wells in the active region. Three types of modulator diodes were tested: a graded index (Al)GaAs p-n-junction, an (Al)GaAs p-i-n junction, and a GaAs/AlGaAs-double-heterojunction. This is of interest for the development of high performance frequency tunable VCSELs where a broad continuous modulation of the laser wavelength is required with only a small variation of the laser power. On the other hand strong intensity modulation leads to a useful mode switching in multi-mode VCSELs.

AB - The paper discusses the laser intensity modulation arising in frequency tuning experiments in the VCSEL. The laser dioxide contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum wells in the active region. Three types of modulator diodes were tested: a graded index (Al)GaAs p-n-junction, an (Al)GaAs p-i-n junction, and a GaAs/AlGaAs-double-heterojunction. This is of interest for the development of high performance frequency tunable VCSELs where a broad continuous modulation of the laser wavelength is required with only a small variation of the laser power. On the other hand strong intensity modulation leads to a useful mode switching in multi-mode VCSELs.

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M3 - Paper

AN - SCOPUS:0028582583

SP - p 197

T2 - Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe

Y2 - 28 August 1994 through 2 September 1994

ER -

Output characteristics of AlGaAs-DH and InGaAs-QW vertical-cavity surface-emitting lasers under strong cavity resonance detuning

Abstract

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All Science Journal Classification (ASJC) codes

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