Abstract
A new oscillatory phenomenon is observed in the magneto-capacitance between the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure and a metal grid gate of 200nm periodicity. The observed minima reflect the minima in the density-of-states of Landau bands resulting from removal of the Landau level degeneracy by the grid gate potential. A model calculation is carried out and the results agree with the experimental observation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 395-399 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 75 |
| Issue number | 5 |
| DOIs | |
| State | Published - Aug 1990 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry