Origin of the butterfly magnetoresistance in ZrSiS

J. A. Voerman, L. Mulder, J. C. De Boer, Y. Huang, L. M. Schoop, Chuan Li, A. Brinkman

Research output: Contribution to journalArticle

Abstract

ZrSiS has been identified as a topological material made from nontoxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance, this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.

Original languageEnglish (US)
Article number084203
JournalPhysical Review Materials
Volume3
Issue number8
DOIs
StatePublished - Aug 23 2019

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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    Voerman, J. A., Mulder, L., De Boer, J. C., Huang, Y., Schoop, L. M., Li, C., & Brinkman, A. (2019). Origin of the butterfly magnetoresistance in ZrSiS. Physical Review Materials, 3(8), [084203]. https://doi.org/10.1103/PhysRevMaterials.3.084203