Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces

A. Bora; A. Pathak; K. C. Liao; M. I. Vexler; A. Kuligk; A. Cattani-Scholz; B. Meinerzhagen; G. Abstreiter; J. Schwartz; M. Tornow

doi:10.1063/1.4811441

Organophosphonates as model system for studying electronic transport through monolayers on SiO₂/Si surfaces

A. Bora, A. Pathak, K. C. Liao, M. I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow

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18 Scopus citations

Abstract

We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO₂ on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1-1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by a simulation. Hence, organophosphonate monolayers are excellent model systems to study electrical transport through ordered structures; they also provide highly efficient electrical passivation of the SiO₂/Si surface.

Original language	English (US)
Article number	241602
Journal	Applied Physics Letters
Volume	102
Issue number	24
DOIs	https://doi.org/10.1063/1.4811441
State	Published - Jun 17 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4811441

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@article{e9f08667baea43f39d2e0696951a3347,

title = "Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces",

abstract = "We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO2 on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1-1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by a simulation. Hence, organophosphonate monolayers are excellent model systems to study electrical transport through ordered structures; they also provide highly efficient electrical passivation of the SiO2/Si surface.",

author = "A. Bora and A. Pathak and Liao, \{K. C.\} and Vexler, \{M. I.\} and A. Kuligk and A. Cattani-Scholz and B. Meinerzhagen and G. Abstreiter and J. Schwartz and M. Tornow",

note = "Funding Information: The authors acknowledge funding by the DFG (Grant Nos. AB 35/8-1 and TO 266/2-1), the NSF (CHE-0924104), the Braunschweig International School of Metrology IGSM, and the Nanosystems Initiative Munich. Experimental and technological support by F. Meyer, C. Bork, A. Schmidt, and D. R{\"u}mmler is gratefully acknowledged.",

year = "2013",

month = jun,

day = "17",

doi = "10.1063/1.4811441",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

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TY - JOUR

T1 - Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces

AU - Bora, A.

AU - Pathak, A.

AU - Liao, K. C.

AU - Vexler, M. I.

AU - Kuligk, A.

AU - Cattani-Scholz, A.

AU - Meinerzhagen, B.

AU - Abstreiter, G.

AU - Schwartz, J.

AU - Tornow, M.

N1 - Funding Information: The authors acknowledge funding by the DFG (Grant Nos. AB 35/8-1 and TO 266/2-1), the NSF (CHE-0924104), the Braunschweig International School of Metrology IGSM, and the Nanosystems Initiative Munich. Experimental and technological support by F. Meyer, C. Bork, A. Schmidt, and D. Rümmler is gratefully acknowledged.

PY - 2013/6/17

Y1 - 2013/6/17

N2 - We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO2 on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1-1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by a simulation. Hence, organophosphonate monolayers are excellent model systems to study electrical transport through ordered structures; they also provide highly efficient electrical passivation of the SiO2/Si surface.

AB - We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO2 on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1-1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by a simulation. Hence, organophosphonate monolayers are excellent model systems to study electrical transport through ordered structures; they also provide highly efficient electrical passivation of the SiO2/Si surface.

UR - https://www.scopus.com/pages/publications/84879815512

UR - https://www.scopus.com/inward/citedby.url?scp=84879815512&partnerID=8YFLogxK

U2 - 10.1063/1.4811441

DO - 10.1063/1.4811441

M3 - Article

AN - SCOPUS:84879815512

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241602

ER -

Organophosphonates as model system for studying electronic transport through monolayers on SiO₂/Si surfaces

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