Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces

A. Bora, A. Pathak, K. C. Liao, M. I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow

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15 Scopus citations


We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO2 on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1-1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by a simulation. Hence, organophosphonate monolayers are excellent model systems to study electrical transport through ordered structures; they also provide highly efficient electrical passivation of the SiO2/Si surface.

Original languageEnglish (US)
Article number241602
JournalApplied Physics Letters
Issue number24
StatePublished - Jun 17 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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