TY - GEN
T1 - Organic-inorganic junctions formed on porous silicon
T2 - Proceedings of the Second Symposium on Dynamics in Small Confining Systems
AU - Cottrell, T. R.
AU - Benziger, Jay Burton
AU - Yee, J. C.
AU - Chun, J. K.M.
AU - Bocarsly, Andrew Bruce
PY - 1993/1/1
Y1 - 1993/1/1
N2 - Organic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3-4 is a primary component in the luminescence mechanism of porous silicon.
AB - Organic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3-4 is a primary component in the luminescence mechanism of porous silicon.
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M3 - Conference contribution
AN - SCOPUS:0027294136
SN - 1558991786
T3 - Materials Research Society Symposium Proceedings
SP - 411
EP - 416
BT - Materials Research Society Symposium Proceedings
PB - Publ by Materials Research Society
Y2 - 30 November 1992 through 4 December 1992
ER -