@inproceedings{8b836c92ed8c41d8beedae2f7f4302ee,
title = "Organic-inorganic junctions formed on porous silicon: Isolation of a surface configuration primary to the luminescence mechanism",
abstract = "Organic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3-4 is a primary component in the luminescence mechanism of porous silicon.",
author = "Cottrell, {T. R.} and Benziger, {J. B.} and Yee, {J. C.} and Chun, {J. K.M.} and Bocarsly, {A. B.}",
year = "1993",
language = "English (US)",
isbn = "1558991786",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "411--416",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of the Second Symposium on Dynamics in Small Confining Systems ; Conference date: 30-11-1992 Through 04-12-1992",
}