Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors

C. Kendrick; A. Kahn

doi:10.1016/S0169-4332(97)00468-6

Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors

C. Kendrick
, A. Kahn

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.

Original language	English (US)
Pages (from-to)	405-411
Number of pages	7
Journal	Applied Surface Science
Volume	123-124
DOIs	https://doi.org/10.1016/S0169-4332(97)00468-6
State	Published - Jan 1998

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Keywords

PTCDA
Point-on-line coincidence
Quasi-epitaxy
STM

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10.1016/S0169-4332(97)00468-6

Cite this

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title = "Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors",

abstract = "We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.",

keywords = "PTCDA, Point-on-line coincidence, Quasi-epitaxy, STM",

author = "C. Kendrick and A. Kahn",

note = "Funding Information: Support of this work by the MRSEC program of the National Science Foundation under award number DMR-9400362 is gratefully acknowledged. We also thank S.R. Forrest for providing the purified",

year = "1998",

month = jan,

doi = "10.1016/S0169-4332(97)00468-6",

language = "English (US)",

volume = "123-124",

pages = "405--411",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Organic-inorganic interfaces

T2 - Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors

AU - Kendrick, C.

AU - Kahn, A.

N1 - Funding Information: Support of this work by the MRSEC program of the National Science Foundation under award number DMR-9400362 is gratefully acknowledged. We also thank S.R. Forrest for providing the purified

PY - 1998/1

Y1 - 1998/1

N2 - We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.

AB - We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.

KW - PTCDA

KW - Point-on-line coincidence

KW - Quasi-epitaxy

KW - STM

UR - https://www.scopus.com/pages/publications/0031703254

UR - https://www.scopus.com/pages/publications/0031703254#tab=citedBy

U2 - 10.1016/S0169-4332(97)00468-6

DO - 10.1016/S0169-4332(97)00468-6

M3 - Article

AN - SCOPUS:0031703254

SN - 0169-4332

VL - 123-124

SP - 405

EP - 411

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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