TY - JOUR
T1 - Organic-inorganic interfaces
T2 - Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors
AU - Kendrick, C.
AU - Kahn, A.
N1 - Funding Information:
Support of this work by the MRSEC program of the National Science Foundation under award number DMR-9400362 is gratefully acknowledged. We also thank S.R. Forrest for providing the purified
PY - 1998/1
Y1 - 1998/1
N2 - We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.
AB - We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.
KW - PTCDA
KW - Point-on-line coincidence
KW - Quasi-epitaxy
KW - STM
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U2 - 10.1016/S0169-4332(97)00468-6
DO - 10.1016/S0169-4332(97)00468-6
M3 - Article
AN - SCOPUS:0031703254
SN - 0169-4332
VL - 123-124
SP - 405
EP - 411
JO - Applied Surface Science
JF - Applied Surface Science
ER -