Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors

C. Kendrick, A. Kahn

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

We present a comprehensive set of molecularly-resolved scanning tunneling microscopy data on the fundamentals of quasi-epitaxy of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphite, Se-passivated GaAs(100) (2 × 1), and InAs(001) (4 × 2). Each of these substrates has smooth large-scale morphology; however, they possess differing surface energies that are seen to affect the growth mode of the PTCDA films. The mechanism of point-on-line coincidence is found to describe the orientation of all PTCDA films whereby the overlayer unit cell is matched one-dimensionally to substrate atomic planes.

Original languageEnglish (US)
Pages (from-to)405-411
Number of pages7
JournalApplied Surface Science
Volume123-124
DOIs
StatePublished - Jan 1998

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • PTCDA
  • Point-on-line coincidence
  • Quasi-epitaxy
  • STM

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