Ordered, quasiepitaxial growth of an organic thin film on Se-passivated GaAs(100)

Keyphrases

• Passivated 100%
• Organic Thin Films 100%
• Dianhydride 100%
• GaAs(100) 100%
• Low Energy Electron Diffraction 66%
• Electron Diffraction Pattern 66%
• Crystallinity 33%
• Active Sites 33%
• Room Temperature 33%
• Lattice Mismatch 33%
• Organic Semiconductors 33%
• Van Der Waals 33%
• Molecular Ordering 33%
• Ultra-high Vacuum 33%
• 3,4,9,10-Perylenetetracarboxylic Dianhydride 33%
• GaAs Surface 33%
• Randomly Oriented 33%
• Ring-like Structures 33%
• Passivated Surface 33%

Engineering

• Gallium Arsenide 100%
• Energy Electron Diffraction 100%
• Thin Films 100%
• Room Temperature 50%
• Plane Parallel 50%
• Organic Semiconductor 50%
• Active Site 50%
• Crystallinity 50%

Material Science

• Film 100%
• Gallium Arsenide 100%
• Diffraction Pattern 100%
• Low-Energy Electron Diffraction 100%
• Thin Films 100%