Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Antoine Kahn; D. Kanani; P. Mark; P. W. Chye; C. Y. Su; I. Lindau; W. E. Spicer

doi:10.1016/0039-6028(79)90532-6

Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Antoine Kahn
, D. Kanani
, P. Mark
, P. W. Chye
, C. Y. Su
, I. Lindau
, W. E. Spicer

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Cleaved GaAs(110) surfaces were exposed to oxygen (10⁶ - 5 × 10¹⁰ L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 10⁸ L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.

Original language	English (US)
Pages (from-to)	325-332
Number of pages	8
Journal	Surface Science
Volume	87
Issue number	2
DOIs	https://doi.org/10.1016/0039-6028(79)90532-6
State	Published - Aug 2 1979

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(79)90532-6

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title = "Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis",

abstract = "Cleaved GaAs(110) surfaces were exposed to oxygen (106 - 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 {\AA}) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.",

author = "Antoine Kahn and D. Kanani and P. Mark and Chye, \{P. W.\} and Su, \{C. Y.\} and I. Lindau and Spicer, \{W. E.\}",

note = "Funding Information: * Supported in part by the Office of Naval Research (N00014-75-C-0394), Army Research Of-fice (DAA29-77-G-0116), National Science Foundation (NSF-ENG75-18529) and Mobil Oil Foundation. ** Supported in part by DAPRA (N00014-79-C-0072).",

year = "1979",

month = aug,

day = "2",

doi = "10.1016/0039-6028(79)90532-6",

language = "English (US)",

volume = "87",

pages = "325--332",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Order-disorder effects in GaAs(110)-oxygen interaction

T2 - A LEED-ups analysis

AU - Kahn, Antoine

AU - Kanani, D.

AU - Mark, P.

AU - Chye, P. W.

AU - Su, C. Y.

AU - Lindau, I.

AU - Spicer, W. E.

N1 - Funding Information: * Supported in part by the Office of Naval Research (N00014-75-C-0394), Army Research Of-fice (DAA29-77-G-0116), National Science Foundation (NSF-ENG75-18529) and Mobil Oil Foundation. ** Supported in part by DAPRA (N00014-79-C-0072).

PY - 1979/8/2

Y1 - 1979/8/2

N2 - Cleaved GaAs(110) surfaces were exposed to oxygen (106 - 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.

AB - Cleaved GaAs(110) surfaces were exposed to oxygen (106 - 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.

UR - https://www.scopus.com/pages/publications/2842613178

UR - https://www.scopus.com/pages/publications/2842613178#tab=citedBy

U2 - 10.1016/0039-6028(79)90532-6

DO - 10.1016/0039-6028(79)90532-6

M3 - Article

AN - SCOPUS:2842613178

SN - 0039-6028

VL - 87

SP - 325

EP - 332

JO - Surface Science

JF - Surface Science

IS - 2

ER -

Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Abstract

All Science Journal Classification (ASJC) codes

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