Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Antoine Kahn, D. Kanani, P. Mark, P. W. Chye, C. Y. Su, I. Lindau, W. E. Spicer

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Cleaved GaAs(110) surfaces were exposed to oxygen (106 - 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.

Original languageEnglish (US)
Pages (from-to)325-332
Number of pages8
JournalSurface Science
Volume87
Issue number2
DOIs
StatePublished - Aug 2 1979

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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