Cleaved GaAs(110) surfaces were exposed to oxygen (106 - 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1-3 Å) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry