Orbitronics: The intrinsic orbital current in p-doped silicon

B. Andrei Bernevig, Taylor L. Hughes, Shou Cheng Zhang

Research output: Contribution to journalArticlepeer-review

94 Scopus citations


The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that an electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction from impurity scattering vanishes and the effect is robust against disorder. The orbital Hall effect leads to accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

Original languageEnglish (US)
Article number066601
JournalPhysical review letters
Issue number6
StatePublished - Aug 5 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


Dive into the research topics of 'Orbitronics: The intrinsic orbital current in p-doped silicon'. Together they form a unique fingerprint.

Cite this