Optimizing Fermi Level Engineering for Single Neutral Silicon Vacancy Centers in Diamond

Arunava Das, Sounak Mukherjee, Zi Huai Zhang, Andrew M. Edmonds, Nicola Palmer, Rajesh Patel, Matthew L. Markham, Nathalie P. de Leon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We use Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy to characterize boron and nitrogen concentrations needed for the stabilization of neutral silicon vacancy centers (SiV0) in Si-implanted diamonds co-doped with boron and nitrogen.

Original languageEnglish (US)
Title of host publication2024 Conference on Lasers and Electro-Optics, CLEO 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781957171395
DOIs
StatePublished - 2024
Externally publishedYes
Event2024 Conference on Lasers and Electro-Optics, CLEO 2024 - Charlotte, United States
Duration: May 7 2024May 10 2024

Publication series

Name2024 Conference on Lasers and Electro-Optics, CLEO 2024

Conference

Conference2024 Conference on Lasers and Electro-Optics, CLEO 2024
Country/TerritoryUnited States
CityCharlotte
Period5/7/245/10/24

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Computer Networks and Communications
  • Civil and Structural Engineering
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Keywords

  • Boron
  • Diamonds
  • Fermi level
  • Fourier transform infrared spectroscopy
  • Laser excitation
  • Lasers and electrooptics
  • Nitrogen
  • Periodic structures
  • Photoluminescence
  • Silicon

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