Optimization of molecular beam epitaxy (MBE) growth for the development of mid-infrared (IR) II-VI quantum cascade lasers

R. T. Moug; H. Sultana; Y. Yao; A. Alfaro-Martinez; L. Peng; T. Garcia; A. Shen; Claire F. Gmachl; M. C. Tamargo

doi:10.1007/s11664-012-2082-x

Optimization of molecular beam epitaxy (MBE) growth for the development of mid-infrared (IR) II-VI quantum cascade lasers

R. T. Moug, H. Sultana, Y. Yao, A. Alfaro-Martinez, L. Peng, T. Garcia, A. Shen, Claire F. Gmachl, M. C. Tamargo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn _0.24Cd _0.26Mg _0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.

Original language	English (US)
Pages (from-to)	944-947
Number of pages	4
Journal	Journal of Electronic Materials
Volume	41
Issue number	5
DOIs	https://doi.org/10.1007/s11664-012-2082-x
State	Published - May 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

II-VI
Intersubband
MBE
Mid-IR
Quantum cascade laser

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10.1007/s11664-012-2082-x

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title = "Optimization of molecular beam epitaxy (MBE) growth for the development of mid-infrared (IR) II-VI quantum cascade lasers",

abstract = "Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn 0.24Cd 0.26Mg 0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.",

keywords = "II-VI, Intersubband, MBE, Mid-IR, Quantum cascade laser",

author = "Moug, {R. T.} and H. Sultana and Y. Yao and A. Alfaro-Martinez and L. Peng and T. Garcia and A. Shen and Gmachl, {Claire F.} and Tamargo, {M. C.}",

note = "Funding Information: This work was supported by NSF Grants No. EEC-0540832 (MIRTHE-ERC) and HRD-0833180 (CENSES).",

year = "2012",

month = may,

doi = "10.1007/s11664-012-2082-x",

language = "English (US)",

volume = "41",

pages = "944--947",

journal = "Journal of Electronic Materials",

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publisher = "Springer New York",

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TY - JOUR

T1 - Optimization of molecular beam epitaxy (MBE) growth for the development of mid-infrared (IR) II-VI quantum cascade lasers

AU - Moug, R. T.

AU - Sultana, H.

AU - Yao, Y.

AU - Alfaro-Martinez, A.

AU - Peng, L.

AU - Garcia, T.

AU - Shen, A.

AU - Gmachl, Claire F.

AU - Tamargo, M. C.

N1 - Funding Information: This work was supported by NSF Grants No. EEC-0540832 (MIRTHE-ERC) and HRD-0833180 (CENSES).

PY - 2012/5

Y1 - 2012/5

N2 - Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn 0.24Cd 0.26Mg 0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.

AB - Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3 μm to 5 μm) electroluminescence (EL) from a II-VI intersubband device based on wide-band-gap (2.9 eV) Zn 0.24Cd 0.26Mg 0.5Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.

KW - II-VI

KW - Intersubband

KW - MBE

KW - Mid-IR

KW - Quantum cascade laser

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U2 - 10.1007/s11664-012-2082-x

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M3 - Article

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SN - 0361-5235

VL - 41

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EP - 947

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Optimization of molecular beam epitaxy (MBE) growth for the development of mid-infrared (IR) II-VI quantum cascade lasers

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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