Abstract
An increase in the oxidation rate of Si has been observed during thermal oxidation accompanied by optical excitation with visible laser light. The enhancement of the oxidation rate is approximately 60%, and is believed to arise from two sources: simple heating by the laser beam, and a direct nonthermal effect of the laser light. The calculated temperature rise is not large enough to fully account for the observed rate increase, and the experimental data are in agreement with calculations based upon a model of optical carrier generation and resultant bond breaking in the Si near the Si-SiO//2 interface. An increase in oxidation rate has also been observed in GaAs and InP.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 494-497 |
| Number of pages | 4 |
| Journal | Journal of vacuum science & technology |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1981 |
| Event | Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: Jan 27 1981 → Jan 29 1981 |
All Science Journal Classification (ASJC) codes
- General Engineering