Optical transmission at 3.39 μm during pulsed laser annealing of silicon

S. A. Lyon; Y. H. Chen; J. F. Lin; J. M. Worlock

doi:10.1063/1.93821

Optical transmission at 3.39 μm during pulsed laser annealing of silicon

S. A. Lyon, Y. H. Chen, J. F. Lin, J. M. Worlock

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3 Scopus citations

Abstract

We have measured the infrared transmission at 3.39 μm, for bulk Si and Si:Au and for silicon on sapphire during pulsed laser annealing. The transmission drops sharply and remains near zero for approximately 100 ns in all samples. The infrared transmission in bulk Si requires milliseconds to completely recover. We attribute this effect to a thermally induced change in the index of refraction of the silicon and associated tuning of the Fabry-Perot cavity formed by the faces of the Si wafers. Our experiments yield no evidence for an optical gap as expected for a Bose condensed exciton phase, and thus are supportive of the thermal melting model of laser annealing.

Original language	English (US)
Pages (from-to)	978-980
Number of pages	3
Journal	Applied Physics Letters
Volume	42
Issue number	11
DOIs	https://doi.org/10.1063/1.93821
State	Published - 1983

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.93821

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title = "Optical transmission at 3.39 μm during pulsed laser annealing of silicon",

abstract = "We have measured the infrared transmission at 3.39 μm, for bulk Si and Si:Au and for silicon on sapphire during pulsed laser annealing. The transmission drops sharply and remains near zero for approximately 100 ns in all samples. The infrared transmission in bulk Si requires milliseconds to completely recover. We attribute this effect to a thermally induced change in the index of refraction of the silicon and associated tuning of the Fabry-Perot cavity formed by the faces of the Si wafers. Our experiments yield no evidence for an optical gap as expected for a Bose condensed exciton phase, and thus are supportive of the thermal melting model of laser annealing.",

author = "Lyon, {S. A.} and Chen, {Y. H.} and Lin, {J. F.} and Worlock, {J. M.}",

year = "1983",

doi = "10.1063/1.93821",

language = "English (US)",

volume = "42",

pages = "978--980",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Optical transmission at 3.39 μm during pulsed laser annealing of silicon

AU - Lyon, S. A.

AU - Chen, Y. H.

AU - Lin, J. F.

AU - Worlock, J. M.

PY - 1983

Y1 - 1983

N2 - We have measured the infrared transmission at 3.39 μm, for bulk Si and Si:Au and for silicon on sapphire during pulsed laser annealing. The transmission drops sharply and remains near zero for approximately 100 ns in all samples. The infrared transmission in bulk Si requires milliseconds to completely recover. We attribute this effect to a thermally induced change in the index of refraction of the silicon and associated tuning of the Fabry-Perot cavity formed by the faces of the Si wafers. Our experiments yield no evidence for an optical gap as expected for a Bose condensed exciton phase, and thus are supportive of the thermal melting model of laser annealing.

AB - We have measured the infrared transmission at 3.39 μm, for bulk Si and Si:Au and for silicon on sapphire during pulsed laser annealing. The transmission drops sharply and remains near zero for approximately 100 ns in all samples. The infrared transmission in bulk Si requires milliseconds to completely recover. We attribute this effect to a thermally induced change in the index of refraction of the silicon and associated tuning of the Fabry-Perot cavity formed by the faces of the Si wafers. Our experiments yield no evidence for an optical gap as expected for a Bose condensed exciton phase, and thus are supportive of the thermal melting model of laser annealing.

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EP - 980

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Optical transmission at 3.39 μm during pulsed laser annealing of silicon

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