Optical transitions in quantum wires with strain-induced lateral confinement

D. Gershoni; J. S. Weiner; S. N.G. Chu; G. A. Baraff; J. M. Vandenberg; L. N. Pfeiffer; K. West; R. A. Logan; T. Tanbun-Ek

doi:10.1103/PhysRevLett.65.1631

Optical transitions in quantum wires with strain-induced lateral confinement

D. Gershoni, J. S. Weiner, S. N.G. Chu, G. A. Baraff, J. M. Vandenberg, L. N. Pfeiffer, K. West, R. A. Logan, T. Tanbun-Ek

Research output: Contribution to journal › Article › peer-review

153 Scopus citations

Abstract

Nanometer-scale quantum wires have been directly produced using an epitaxial-growth technique. Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. These novel structures are studied by luminescence and luminescence-excitation spectroscopies and by transmission electron microscopy. Large energy shifts and polarization anisotropy are observed. The results compare very well with a theoretical model based on the effective-mass approximation and elastic and phenomenological deformation-potential theories.

Original language	English (US)
Pages (from-to)	1631-1634
Number of pages	4
Journal	Physical review letters
Volume	65
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.65.1631
State	Published - 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.65.1631

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title = "Optical transitions in quantum wires with strain-induced lateral confinement",

abstract = "Nanometer-scale quantum wires have been directly produced using an epitaxial-growth technique. Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. These novel structures are studied by luminescence and luminescence-excitation spectroscopies and by transmission electron microscopy. Large energy shifts and polarization anisotropy are observed. The results compare very well with a theoretical model based on the effective-mass approximation and elastic and phenomenological deformation-potential theories.",

author = "D. Gershoni and Weiner, \{J. S.\} and Chu, \{S. N.G.\} and Baraff, \{G. A.\} and Vandenberg, \{J. M.\} and Pfeiffer, \{L. N.\} and K. West and Logan, \{R. A.\} and T. Tanbun-Ek",

year = "1990",

doi = "10.1103/PhysRevLett.65.1631",

language = "English (US)",

volume = "65",

pages = "1631--1634",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

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TY - JOUR

T1 - Optical transitions in quantum wires with strain-induced lateral confinement

AU - Gershoni, D.

AU - Weiner, J. S.

AU - Chu, S. N.G.

AU - Baraff, G. A.

AU - Vandenberg, J. M.

AU - Pfeiffer, L. N.

AU - West, K.

AU - Logan, R. A.

AU - Tanbun-Ek, T.

PY - 1990

Y1 - 1990

N2 - Nanometer-scale quantum wires have been directly produced using an epitaxial-growth technique. Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. These novel structures are studied by luminescence and luminescence-excitation spectroscopies and by transmission electron microscopy. Large energy shifts and polarization anisotropy are observed. The results compare very well with a theoretical model based on the effective-mass approximation and elastic and phenomenological deformation-potential theories.

AB - Nanometer-scale quantum wires have been directly produced using an epitaxial-growth technique. Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. These novel structures are studied by luminescence and luminescence-excitation spectroscopies and by transmission electron microscopy. Large energy shifts and polarization anisotropy are observed. The results compare very well with a theoretical model based on the effective-mass approximation and elastic and phenomenological deformation-potential theories.

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DO - 10.1103/PhysRevLett.65.1631

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AN - SCOPUS:0001100678

SN - 0031-9007

VL - 65

SP - 1631

EP - 1634

JO - Physical review letters

JF - Physical review letters

IS - 13

ER -

Optical transitions in quantum wires with strain-induced lateral confinement

Abstract

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