Optical study of interacting donors in semiconductors

G. A. Thomas, M. Capizzi, F. Derosa, R. N. Bhatt, T. M. Rice

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Detailed measurements and theoretical analysis are presented of the far-infrared absorption coefficient of phosphorous donors in uncompensated silicon at low temperatures. The study covers over 3 orders of magnitude in doping density, i.e., from the regime of isolated donors to near the insulator-metal transition at 3.7×1018 cm-3. The photon energy was varied from 5% of the isolated donor ionization energy (45.5 meV) to about 25% above it. The spectra are described quantitatively by including pair states (donor excitons), charge-transfer excitations at low densities and energy, and excitation processes in larger random clusters at higher densities. The results indicate that the donors form a nearly ideal, random, three-dimensional system in which there are large-scale potential fluctuations which dominate the approach to the delocalization transition.

Original languageEnglish (US)
Pages (from-to)5472-5494
Number of pages23
JournalPhysical Review B
Issue number10
StatePublished - Jan 1 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Thomas, G. A., Capizzi, M., Derosa, F., Bhatt, R. N., & Rice, T. M. (1981). Optical study of interacting donors in semiconductors. Physical Review B, 23(10), 5472-5494. https://doi.org/10.1103/PhysRevB.23.5472