Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near-field scanning optical microscopy

Robert D. Grober; Timothy D. Harris; Jay K. Trautman; Eric Betzig; Werner Wegscheider; Loren Pfeiffer; Ken West

doi:10.1063/1.111903

Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near-field scanning optical microscopy

Robert D. Grober, Timothy D. Harris, Jay K. Trautman, Eric Betzig, Werner Wegscheider, Loren Pfeiffer, Ken West

Research output: Contribution to journal › Article › peer-review

142 Scopus citations

Abstract

We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)-oriented multiple quantum wells, the (110)-oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)-oriented single quantum well. Quenching of the multiple quantum wells and single quantum well emission near the quantum wires is attributed to diffusion of photoexcited carriers into the wires.

Original language	English (US)
Pages (from-to)	1421-1423
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	11
DOIs	https://doi.org/10.1063/1.111903
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111903

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title = "Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near-field scanning optical microscopy",

abstract = "We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)-oriented multiple quantum wells, the (110)-oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)-oriented single quantum well. Quenching of the multiple quantum wells and single quantum well emission near the quantum wires is attributed to diffusion of photoexcited carriers into the wires.",

author = "Grober, \{Robert D.\} and Harris, \{Timothy D.\} and Trautman, \{Jay K.\} and Eric Betzig and Werner Wegscheider and Loren Pfeiffer and Ken West",

year = "1994",

doi = "10.1063/1.111903",

language = "English (US)",

volume = "64",

pages = "1421--1423",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near-field scanning optical microscopy

AU - Grober, Robert D.

AU - Harris, Timothy D.

AU - Trautman, Jay K.

AU - Betzig, Eric

AU - Wegscheider, Werner

AU - Pfeiffer, Loren

AU - West, Ken

PY - 1994

Y1 - 1994

N2 - We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)-oriented multiple quantum wells, the (110)-oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)-oriented single quantum well. Quenching of the multiple quantum wells and single quantum well emission near the quantum wires is attributed to diffusion of photoexcited carriers into the wires.

AB - We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)-oriented multiple quantum wells, the (110)-oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)-oriented single quantum well. Quenching of the multiple quantum wells and single quantum well emission near the quantum wires is attributed to diffusion of photoexcited carriers into the wires.

UR - https://www.scopus.com/pages/publications/0028386881

UR - https://www.scopus.com/inward/citedby.url?scp=0028386881&partnerID=8YFLogxK

U2 - 10.1063/1.111903

DO - 10.1063/1.111903

M3 - Article

AN - SCOPUS:0028386881

SN - 0003-6951

VL - 64

SP - 1421

EP - 1423

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near-field scanning optical microscopy

Abstract

All Science Journal Classification (ASJC) codes

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