Optical saturation of mid-infrared transitions in self-assembled InAs quantum dots: Evidence for an LO phonon bottleneck

K. W. Berryman, Stephen Aplin Lyon, Mordechai Segev, J. R. Engholm

Research output: Contribution to conferencePaper

Abstract

The saturation of mid-infrared transitions of electrons out of self-assembled InAs quantum dots (infrared photoconductivity) is investigated. The existence of this saturation means that charge carriers survive in the excited state at least as long as their characteristic time for tunnelling out of the dot region, thus setting a lower limit on the lifetime of the carriers in the excited state. This lifetime is estimated to be in excess of 15 picosecond, indicating that LO phonon emission has been suppressed.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 1999
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Berryman, K. W., Lyon, S. A., Segev, M., & Engholm, J. R. (1999). Optical saturation of mid-infrared transitions in self-assembled InAs quantum dots: Evidence for an LO phonon bottleneck. Paper presented at Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99), Baltimore, MD, USA, .