Abstract
The saturation of mid-infrared transitions of electrons out of self-assembled InAs quantum dots (infrared photoconductivity) is investigated. The existence of this saturation means that charge carriers survive in the excited state at least as long as their characteristic time for tunnelling out of the dot region, thus setting a lower limit on the lifetime of the carriers in the excited state. This lifetime is estimated to be in excess of 15 picosecond, indicating that LO phonon emission has been suppressed.
| Original language | English (US) |
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| Pages | 16 |
| Number of pages | 1 |
| State | Published - 1999 |
| Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: May 23 1999 → May 28 1999 |
Other
| Other | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 5/23/99 → 5/28/99 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy