Abstract
Zn1-xMgxSeyTe1-y quaternary alloys were molecular beam epitaxially-grown on ZnTe substrates. The photoluminescence properties of the ZnTe/ZnMgSeTe single-quantum-well structure were analyzed, focusing on the band lineup and band offset. The optical properties were very promising for device applications in terms of strong emission intensity and narrow linewidth.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1530-1533 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 18 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2000 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering