Abstract
Zn1-xMgxSeyTe1-y quaternary alloys were molecular beam epitaxially-grown on ZnTe substrates. The photoluminescence properties of the ZnTe/ZnMgSeTe single-quantum-well structure were analyzed, focusing on the band lineup and band offset. The optical properties were very promising for device applications in terms of strong emission intensity and narrow linewidth.
Original language | English (US) |
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Pages (from-to) | 1530-1533 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 3 |
DOIs | |
State | Published - May 2000 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering