Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper)

James C. Sturm, Xiaodong Xiao, H. Manoharan, P. V. Schwartz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Through proper reactor design and accurate temperature measurement, high quality silicon/silicon-germanium alloy (Si1-xGex) strained layer structures can be grown by rapid thermal chemical vapor deposition with growth temperatures in the 600 - 700°C range. Photoluminescence measurements show well resolved band-edge features, indicating that the films are of very high quality. Quantum confinement effects have also been observed in quantum wells with widths down to 3 nm.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMehrdad M. Moslehi, Rajendra Singh, Dim-Lee Kwong
PublisherPubl by Int Soc for Optical Engineering
Pages90-98
Number of pages9
ISBN (Print)0819407267
StatePublished - Jan 1 1992
EventRapid Thermal and Integrated Processing - San Jose, CA, USA
Duration: Sep 10 1991Sep 11 1991

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1595
ISSN (Print)0277-786X

Other

OtherRapid Thermal and Integrated Processing
CitySan Jose, CA, USA
Period9/10/919/11/91

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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