Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper)

James C. Sturm; Xiaodong Xiao; H. Manoharan; P. V. Schwartz

Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper)

James C. Sturm, Xiaodong Xiao, H. Manoharan, P. V. Schwartz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Through proper reactor design and accurate temperature measurement, high quality silicon/silicon-germanium alloy (Si_1-xGe_x) strained layer structures can be grown by rapid thermal chemical vapor deposition with growth temperatures in the 600 - 700°C range. Photoluminescence measurements show well resolved band-edge features, indicating that the films are of very high quality. Quantum confinement effects have also been observed in quantum wells with widths down to 3 nm.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Mehrdad M. Moslehi, Rajendra Singh, Dim-Lee Kwong
Publisher	Publ by Int Soc for Optical Engineering
Pages	90-98
Number of pages	9
ISBN (Print)	0819407267
State	Published - Jan 1 1992
Event	Rapid Thermal and Integrated Processing - San Jose, CA, USA Duration: Sep 10 1991 → Sep 11 1991

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1595
ISSN (Print)	0277-786X

Other

Other	Rapid Thermal and Integrated Processing
City	San Jose, CA, USA
Period	9/10/91 → 9/11/91

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Sturm, J. C., Xiao, X., Manoharan, H., & Schwartz, P. V. (1992). Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper). In M. M. Moslehi, R. Singh, & D-L. Kwong (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 90-98). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1595). Publ by Int Soc for Optical Engineering.

Sturm, James C. ; Xiao, Xiaodong ; Manoharan, H. et al. / Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper). Proceedings of SPIE - The International Society for Optical Engineering. editor / Mehrdad M. Moslehi ; Rajendra Singh ; Dim-Lee Kwong. Publ by Int Soc for Optical Engineering, 1992. pp. 90-98 (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper)",

abstract = "Through proper reactor design and accurate temperature measurement, high quality silicon/silicon-germanium alloy (Si1-xGex) strained layer structures can be grown by rapid thermal chemical vapor deposition with growth temperatures in the 600 - 700°C range. Photoluminescence measurements show well resolved band-edge features, indicating that the films are of very high quality. Quantum confinement effects have also been observed in quantum wells with widths down to 3 nm.",

author = "Sturm, {James C.} and Xiaodong Xiao and H. Manoharan and Schwartz, {P. V.}",

year = "1992",

month = jan,

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Rapid Thermal and Integrated Processing ; Conference date: 10-09-1991 Through 11-09-1991",

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Sturm, JC, Xiao, X, Manoharan, H & Schwartz, PV 1992, Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper). in MM Moslehi, R Singh & D-L Kwong (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1595, Publ by Int Soc for Optical Engineering, pp. 90-98, Rapid Thermal and Integrated Processing, San Jose, CA, USA, 9/10/91.

Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper). / Sturm, James C.; Xiao, Xiaodong; Manoharan, H. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong. Publ by Int Soc for Optical Engineering, 1992. p. 90-98 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1595).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Moslehi, Mehrdad M.

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Sturm JC, Xiao X, Manoharan H, Schwartz PV. Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper). In Moslehi MM, Singh R, Kwong D-L, editors, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1992. p. 90-98. (Proceedings of SPIE - The International Society for Optical Engineering).

Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition (Invited Paper)

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