Abstract
Plateaus in the electron-hole recombination energy and minima in the peak intensity at integer and fractional filling factors occur in the luminescence from ultrahigh-mobility GaAs single quantum wells. At Landau and spin gaps the regions of plateaus and intensity minima broaden as the temperature is reduced, in consort with the transport Hall resistance. A sharp intensity minimum and peak shift is seen at =2/3, while higher-field fractions are characterized by a splitting in the luminescence. The optical anomalies are directly related to the position of the Fermi energy in localized transport states.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 641-644 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 65 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1990 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
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