Optical investigation of high-mobility dilute two-dimensional hole gases in GaAs (3 1 1)A quantum structures

A. S. Plaut; A. Pinczuk; B. S. Dennis; C. F. Hirjibehedin; L. N. Pfeiffer; K. W. West

doi:10.1016/S1386-9477(01)00483-0

Optical investigation of high-mobility dilute two-dimensional hole gases in GaAs (3 1 1)A quantum structures

A. S. Plaut, A. Pinczuk, B. S. Dennis, C. F. Hirjibehedin, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have investigated the photoluminescence (PL) and inelastic light-scattering spectra of dilute two-dimensional (2D) hole gases of ultra-high mobility. The samples were GaAs-Al_xGa_1-xAs (3 1 1) A quantum structures, modulation-doped with Si. We find these samples not to deplete fully on illumination. The PL displays both excitonic and 2D hole gas transitions. We observe inelastic light-scattering, resonating on these intersubband transitions. Our measured intersubband excitation energies are in agreement with current calculations. These resonance enhancements are consistent with an electron-like dispersion of the first-excited hole subband at zero magnetic field.

Original language	English (US)
Pages (from-to)	539-542
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00483-0
State	Published - Jan 2002
Externally published	Yes
Event	14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

2D holes
GaAs
Raman scattering spectroscopy Photoluminescence

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10.1016/S1386-9477(01)00483-0

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@article{7c13c84d91414a1fa673eb92d2b0ac28,

title = "Optical investigation of high-mobility dilute two-dimensional hole gases in GaAs (3 1 1)A quantum structures",

abstract = "We have investigated the photoluminescence (PL) and inelastic light-scattering spectra of dilute two-dimensional (2D) hole gases of ultra-high mobility. The samples were GaAs-AlxGa1-xAs (3 1 1) A quantum structures, modulation-doped with Si. We find these samples not to deplete fully on illumination. The PL displays both excitonic and 2D hole gas transitions. We observe inelastic light-scattering, resonating on these intersubband transitions. Our measured intersubband excitation energies are in agreement with current calculations. These resonance enhancements are consistent with an electron-like dispersion of the first-excited hole subband at zero magnetic field.",

keywords = "2D holes, GaAs, Raman scattering spectroscopy Photoluminescence",

author = "Plaut, {A. S.} and A. Pinczuk and Dennis, {B. S.} and Hirjibehedin, {C. F.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2002",

month = jan,

doi = "10.1016/S1386-9477(01)00483-0",

language = "English (US)",

volume = "12",

pages = "539--542",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

note = "14th International Conference on the ; Conference date: 30-07-2001 Through 03-08-2001",

}

TY - JOUR

T1 - Optical investigation of high-mobility dilute two-dimensional hole gases in GaAs (3 1 1)A quantum structures

AU - Plaut, A. S.

AU - Pinczuk, A.

AU - Dennis, B. S.

AU - Hirjibehedin, C. F.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2002/1

Y1 - 2002/1

N2 - We have investigated the photoluminescence (PL) and inelastic light-scattering spectra of dilute two-dimensional (2D) hole gases of ultra-high mobility. The samples were GaAs-AlxGa1-xAs (3 1 1) A quantum structures, modulation-doped with Si. We find these samples not to deplete fully on illumination. The PL displays both excitonic and 2D hole gas transitions. We observe inelastic light-scattering, resonating on these intersubband transitions. Our measured intersubband excitation energies are in agreement with current calculations. These resonance enhancements are consistent with an electron-like dispersion of the first-excited hole subband at zero magnetic field.

AB - We have investigated the photoluminescence (PL) and inelastic light-scattering spectra of dilute two-dimensional (2D) hole gases of ultra-high mobility. The samples were GaAs-AlxGa1-xAs (3 1 1) A quantum structures, modulation-doped with Si. We find these samples not to deplete fully on illumination. The PL displays both excitonic and 2D hole gas transitions. We observe inelastic light-scattering, resonating on these intersubband transitions. Our measured intersubband excitation energies are in agreement with current calculations. These resonance enhancements are consistent with an electron-like dispersion of the first-excited hole subband at zero magnetic field.

KW - 2D holes

KW - GaAs

KW - Raman scattering spectroscopy Photoluminescence

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UR - http://www.scopus.com/inward/citedby.url?scp=0035239469&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(01)00483-0

DO - 10.1016/S1386-9477(01)00483-0

M3 - Conference article

AN - SCOPUS:0035239469

SN - 1386-9477

VL - 12

SP - 539

EP - 542

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - 14th International Conference on the

Y2 - 30 July 2001 through 3 August 2001

ER -

Optical investigation of high-mobility dilute two-dimensional hole gases in GaAs (3 1 1)A quantum structures

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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