Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

Ming Way Lee; D. Romero; H. D. Drew; M. Shayegan; B. S. Elman

doi:10.1016/0038-1098(88)90484-X

Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

Ming Way Lee
, D. Romero
, H. D. Drew
, M. Shayegan
, B. S. Elman

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Far infrared magneto transmission measurements on n-type GaAs doped near the metal-insulator transition show evidence for the impurity ls-2p^± optical transition in both the insulating and the metallic states and no cyclotron resonance at low temperatures. The ls-2p^± absorption line-shape varies smoothly through the magnetic field induced metal-insulator transition.

Original language	English (US)
Pages (from-to)	23-27
Number of pages	5
Journal	Solid State Communications
Volume	66
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(88)90484-X
State	Published - Apr 1988

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(88)90484-X

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@article{29c7ef88dd754df789b8836e38606e0b,

title = "Optical evidence for the impurity band nature of the metal-insulator transition in GaAs",

abstract = "Far infrared magneto transmission measurements on n-type GaAs doped near the metal-insulator transition show evidence for the impurity ls-2p± optical transition in both the insulating and the metallic states and no cyclotron resonance at low temperatures. The ls-2p± absorption line-shape varies smoothly through the magnetic field induced metal-insulator transition.",

author = "Lee, \{Ming Way\} and D. Romero and Drew, \{H. D.\} and M. Shayegan and Elman, \{B. S.\}",

note = "Funding Information: AcknowledEements-Part of this work was performed while the authors were guests at the Francis Bitter National Magnet Laboratory, which is supported by the National Science Foundation We thank L Rubin and B Brandt for technical assistance We acknowledge support through NSF Grants DMR-8704670, DMR-8705002 and an NSF Presidential Young Investigator Award (Grant No EC8-8553110) and an IBM Faculty Development Award for M S Also we gratefully acknowledge useful discussions with D Belitz, V Goldman, J Jain, V Korenman, and D Larsen Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1988",

month = apr,

doi = "10.1016/0038-1098(88)90484-X",

language = "English (US)",

volume = "66",

pages = "23--27",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "1",

}

TY - JOUR

T1 - Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

AU - Lee, Ming Way

AU - Romero, D.

AU - Drew, H. D.

AU - Shayegan, M.

AU - Elman, B. S.

N1 - Funding Information: AcknowledEements-Part of this work was performed while the authors were guests at the Francis Bitter National Magnet Laboratory, which is supported by the National Science Foundation We thank L Rubin and B Brandt for technical assistance We acknowledge support through NSF Grants DMR-8704670, DMR-8705002 and an NSF Presidential Young Investigator Award (Grant No EC8-8553110) and an IBM Faculty Development Award for M S Also we gratefully acknowledge useful discussions with D Belitz, V Goldman, J Jain, V Korenman, and D Larsen Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1988/4

Y1 - 1988/4

N2 - Far infrared magneto transmission measurements on n-type GaAs doped near the metal-insulator transition show evidence for the impurity ls-2p± optical transition in both the insulating and the metallic states and no cyclotron resonance at low temperatures. The ls-2p± absorption line-shape varies smoothly through the magnetic field induced metal-insulator transition.

AB - Far infrared magneto transmission measurements on n-type GaAs doped near the metal-insulator transition show evidence for the impurity ls-2p± optical transition in both the insulating and the metallic states and no cyclotron resonance at low temperatures. The ls-2p± absorption line-shape varies smoothly through the magnetic field induced metal-insulator transition.

UR - https://www.scopus.com/pages/publications/0023999499

UR - https://www.scopus.com/pages/publications/0023999499#tab=citedBy

U2 - 10.1016/0038-1098(88)90484-X

DO - 10.1016/0038-1098(88)90484-X

M3 - Article

AN - SCOPUS:0023999499

SN - 0038-1098

VL - 66

SP - 23

EP - 27

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

Abstract

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